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Transistors

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Part Number
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IPB015N04LGATMA1
IPB015N04LGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 346nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock282

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IPB015N04NGATMA1
IPB015N04NGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,723

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IPB015N08N5ATMA1
IPB015N08N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 279µA
  • Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock207

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IPB016N06L3GATMA1
IPB016N06L3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock264

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IPB017N06N3GATMA1
IPB017N06N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock407

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IPB017N08N5ATMA1
IPB017N08N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 120A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 16900pF @ 40V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,913

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IPB017N10N5ATMA1
IPB017N10N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 180A D2PAK-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 279µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock11,924

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IPB017N10N5LFATMA1
IPB017N10N5LFATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V D2PAK-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™-5
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V
  • Power Dissipation (Max): 313W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock120

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IPB019N06L3GATMA1
IPB019N06L3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 30V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock2,030

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IPB019N08N3GATMA1
IPB019N08N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock114

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IPB020N04NGATMA1
IPB020N04NGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 140A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 20V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock1,894

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IPB020N08N5ATMA1
IPB020N08N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 140A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 208µA
  • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 40V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock4,500

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IPB020N10N5ATMA1
IPB020N10N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,794

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IPB020N10N5LFATMA1
IPB020N10N5LFATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V D2PAK-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™-5
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 50V
  • Power Dissipation (Max): 313W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock433

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IPB020NE7N3GATMA1
IPB020NE7N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 273µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,159

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IPB021N06N3GATMA1
IPB021N06N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 196µA
  • Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock202

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IPB022N04LGATMA1
IPB022N04LGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 90A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 20V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock270

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IPB023N04NGATMA1
IPB023N04NGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 90A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 20V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock211

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IPB023N06N3GATMA1
IPB023N06N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 140A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 141µA
  • Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 30V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock372

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IPB024N08N5ATMA1
IPB024N08N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 154µA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 40V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock142

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IPB024N10N5ATMA1
IPB024N10N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 183µA
  • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 50V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In Stock135

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IPB025N08N3GATMA1
IPB025N08N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 40V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock210

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IPB025N10N3GATMA1
IPB025N10N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock382

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IPB025N10N3GE8187ATMA1
IPB025N10N3GE8187ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock362

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IPB026N06NATMA1
IPB026N06NATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 25A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 75µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 30V
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock196

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IPB027N10N3GATMA1
IPB027N10N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock235

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IPB027N10N5ATMA1
IPB027N10N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 120A D2PAK-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 184µA
  • Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 50V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock158

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IPB029N06N3GATMA1
IPB029N06N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 118µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock2,976

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IPB029N06N3GE8187ATMA1
IPB029N06N3GE8187ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 118µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock337

More on Order
IPB030N08N3GATMA1
IPB030N08N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 160A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock2,445

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