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| Part Number | IPB025N10N3GE8187ATMA1 |
| OEMstron Part # | IPB025N10N3GE8187ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V 180A TO263-7 |
| Lifecycle | Not For New Designs |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB025N10N3GE8187ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 13 - May 18 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPB025N10N3GE8187ATMA1 Specifications
| Part Number | IPB025N10N3GE8187ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Not For New Designs | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 180A | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA | |
| Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-7 | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
IPB025N10N3GE8187ATMA1 Documents
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