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Programmable Unijunction

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CategorySemiconductors / Transistors / Programmable Unijunction
Records 26
Page 1/1
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Voltage
Power Dissipation (Max)
Voltage - Output
Voltage - Offset (Vt)
Current - Gate to Anode Leakage (Igao)
Current - Valley (Iv)
Current - Peak
Package / Case
CMPP6028 TR
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT SOT-23

In Stock26,446

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 167mW
Voltage - Output: 6V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-236-3, SC-59, SOT-23-3
2N6028
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT 40V TO226-3

In Stock1,420

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 6V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
2N6027
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT 40V TO226-3

In Stock163

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 6V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
CMPP6027 TR
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT SOT-23

In Stock183

More on Order

Series: *
Voltage: -
Power Dissipation (Max): -
Voltage - Output: -
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): -
Current - Peak: -
Package / Case: -
2N6027RLRA
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock456

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRA
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock164

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027RLRAG
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock459

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRAG
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock412

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027G
ON Semiconductor

Transistors - Programmable Unijunction

TRANS PROG UNIJUNCT 40V TO92

In Stock402

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
2N6027RL1
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock279

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028G
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock259

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
2N6028RLRP
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock346

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6027RL1G
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock337

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRMG
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock213

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
2N6028RLRPG
ON Semiconductor

Transistors - Programmable Unijunction

THYRISTOR PROG UNIJUNCT 40V TO92

In Stock170

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 300mW
Voltage - Output: 11V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
CMPP6027R BK
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT SOT-23

In Stock374

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 167mW
Voltage - Output: 6V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-236-3, SC-59, SOT-23-3
CMPP6028R BK
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT SOT-23

In Stock318

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 167mW
Voltage - Output: 6V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-236-3, SC-59, SOT-23-3
CMPP6027R TR
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT SOT-23

In Stock386

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 167mW
Voltage - Output: 6V
Voltage - Offset (Vt): 1.6V
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 50µA
Current - Peak: 2µA
Package / Case: TO-236-3, SC-59, SOT-23-3
CMPP6028R TR
Central Semiconductor Corp

Transistors - Programmable Unijunction

PROGRAMMABLE UJT SOT-23

In Stock252

More on Order

Series: -
Voltage: 40V
Power Dissipation (Max): 167mW
Voltage - Output: 6V
Voltage - Offset (Vt): 600mV
Current - Gate to Anode Leakage (Igao): 10nA
Current - Valley (Iv): 25µA
Current - Peak: 150nA
Package / Case: TO-236-3, SC-59, SOT-23-3
2N2647
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock364

More on Order

Series: -
Voltage: -
Power Dissipation (Max): 300mW
Voltage - Output: 6V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 18mA
Current - Peak: 2µA
Package / Case: TO-206AA, TO-18-3 Metal Can
2N4851
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock220

More on Order

Series: -
Voltage: -
Power Dissipation (Max): 300mW
Voltage - Output: 3V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 2mA
Current - Peak: 2µA
Package / Case: TO-206AA, TO-18-3 Metal Can
2N4852
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock262

More on Order

Series: -
Voltage: -
Power Dissipation (Max): 300mW
Voltage - Output: 5V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 4mA
Current - Peak: 2µA
Package / Case: TO-206AA, TO-18-3 Metal Can
2N4853
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock346

More on Order

Series: -
Voltage: -
Power Dissipation (Max): 300mW
Voltage - Output: 6V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 6mA
Current - Peak: 400nA
Package / Case: TO-206AA, TO-18-3 Metal Can
2N4948
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock386

More on Order

Series: -
Voltage: -
Power Dissipation (Max): -
Voltage - Output: 6V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 2mA
Current - Peak: 2µA
Package / Case: TO-206AA, TO-18-3 Metal Can
2N4949
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock407

More on Order

Series: -
Voltage: -
Power Dissipation (Max): -
Voltage - Output: 3V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 2mA
Current - Peak: 1µA
Package / Case: TO-206AA, TO-18-3 Metal Can
2N5431
Central Semiconductor Corp

Transistors - Programmable Unijunction

THROUGH-HOLE UJT

In Stock109

More on Order

Series: -
Voltage: -
Power Dissipation (Max): -
Voltage - Output: 1V
Voltage - Offset (Vt): -
Current - Gate to Anode Leakage (Igao): -
Current - Valley (Iv): 2mA
Current - Peak: 400nA
Package / Case: TO-206AA, TO-18-3 Metal Can