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Transistors

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Part Number
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IPB031N08N5ATMA1
IPB031N08N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 40V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock147

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IPB031NE7N3GATMA1
IPB031NE7N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8130pF @ 37.5V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock439

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IPB032N10N5ATMA1
IPB032N10N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 166A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 83A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 50V
  • Power Dissipation (Max): 187W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In Stock303

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IPB033N10N5LFATMA1
IPB033N10N5LFATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V D2PAK-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™-5
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.1V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 50V
  • Power Dissipation (Max): 179W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock2,283

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IPB034N03LGATMA1
IPB034N03LGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A TO-263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock468

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IPB034N06L3GATMA1
IPB034N06L3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 90A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock362

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IPB034N06N3GATMA1
IPB034N06N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 100A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 93µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock270

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IPB035N08N3GATMA1
IPB035N08N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,838

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IPB036N12N3GATMA1
IPB036N12N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 120V 180A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock368

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IPB037N06N3GATMA1
IPB037N06N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 90A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,905

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IPB038N12N3GATMA1
IPB038N12N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 120V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock375

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IPB039N04LGATMA1
IPB039N04LGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 80A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock411

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IPB039N10N3GATMA1
IPB039N10N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 160A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock3,121

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IPB039N10N3GE8187ATMA1
IPB039N10N3GE8187ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 160A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock350

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IPB03N03LA
IPB03N03LA

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 80A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock400

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IPB03N03LA G
IPB03N03LA G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 80A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock354

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IPB03N03LB
IPB03N03LB

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7624pF @ 15V
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock416

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IPB03N03LB G
IPB03N03LB G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7624pF @ 15V
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock401

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IPB041N04NGATMA1
IPB041N04NGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 80A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock477

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IPB042N03LGATMA1
IPB042N03LGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 70A TO-263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
  • Power Dissipation (Max): 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock2,247

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IPB042N10N3GATMA1
IPB042N10N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,386

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IPB042N10N3GE8187ATMA1
IPB042N10N3GE8187ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410pF @ 50V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock118

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IPB044N15N5ATMA1
IPB044N15N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 174A TO263-7

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 87A, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 264µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 75V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7
  • Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
In Stock1,939

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IPB048N06LGATMA1
IPB048N06LGATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 100A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 30V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock465

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IPB048N15N5ATMA1
IPB048N15N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 264µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 75V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock423

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IPB048N15N5LFATMA1
IPB048N15N5LFATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™-5
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 120A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 255µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 75V
  • Power Dissipation (Max): 313W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock142

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IPB049N06L3GATMA1
IPB049N06L3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 80A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 58µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
  • Power Dissipation (Max): 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock390

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IPB049N08N5ATMA1
IPB049N08N5ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 66µA
  • Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 40V
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock500

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IPB049NE7N3GATMA1
IPB049NE7N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 80A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 91µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 37.5V
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,858

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IPB04N03LA
IPB04N03LA

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 80A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3877pF @ 15V
  • Power Dissipation (Max): 107W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock430

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