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Transistors

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IPA65R150CFDXKSA1
IPA65R150CFDXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 22.4A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
  • Power Dissipation (Max): 34.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock3,331

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IPA65R150CFDXKSA2
IPA65R150CFDXKSA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

HIGH POWER_LEGACY

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CFD2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
  • Power Dissipation (Max): 34.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock236

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IPA65R190C6XKSA1
IPA65R190C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 20.2A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock219

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IPA65R190C7XKSA1
IPA65R190C7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 8A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 290µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock273

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IPA65R190CFDXKSA1
IPA65R190CFDXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 17.5A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock3,874

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IPA65R190CFDXKSA2
IPA65R190CFDXKSA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

HIGH POWER_LEGACY

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CFD2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock382

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IPA65R190E6XKSA1
IPA65R190E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 20.2A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock316

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IPA65R1K0CEXKSA1
IPA65R1K0CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock468

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IPA65R1K5CEXKSA1
IPA65R1K5CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock451

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IPA65R225C7XKSA1
IPA65R225C7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V
  • Power Dissipation (Max): 29W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock141

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IPA65R280C6XKSA1
IPA65R280C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 13.8A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock340

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IPA65R280E6XKSA1
IPA65R280E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 13.8A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock396

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IPA65R310CFDXKSA1
IPA65R310CFDXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 11.4A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock484

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IPA65R310CFDXKSA2
IPA65R310CFDXKSA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

LOW POWER_LEGACY

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CFD2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock191

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IPA65R310DEXKSA1
IPA65R310DEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO220

  • Manufacturer: Infineon Technologies
In Stock367

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IPA65R380C6XKSA1
IPA65R380C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 10.6A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock226

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IPA65R380E6XKSA1
IPA65R380E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 10.6A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock2,662

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IPA65R400CEXKSA1
IPA65R400CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock188

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IPA65R420CFDXKSA1
IPA65R420CFDXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 8.7A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
  • Power Dissipation (Max): 31.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock207

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IPA65R420CFDXKSA2
IPA65R420CFDXKSA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

LOW POWER_LEGACY

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CFD2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
  • Power Dissipation (Max): 31.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock394

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IPA65R600C6XKSA1
IPA65R600C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 7.3A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock257

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IPA65R600E6XKSA1
IPA65R600E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 7.3A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock1,443

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IPA65R650CEXKSA1
IPA65R650CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO-220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 210µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock1,976

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IPA65R660CFDXKSA1
IPA65R660CFDXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 6A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V
  • Power Dissipation (Max): 27.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock372

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IPA70R360P7SXKSA1
IPA70R360P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 700V 12.5A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V
  • Power Dissipation (Max): 26.4W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock727

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IPA70R450P7SXKSA1
IPA70R450P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 10A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 400V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 400V
  • Power Dissipation (Max): 22.7W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock719

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IPA70R600P7SXKSA1
IPA70R600P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 700V 8.5A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V
  • Power Dissipation (Max): 25W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock301

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IPA70R750P7SXKSA1
IPA70R750P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V
  • Power Dissipation (Max): 21.2W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock850

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IPA70R900P7SXKSA1
IPA70R900P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 400V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
  • Power Dissipation (Max): 20.5W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock645

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IPA80R1K0CEXKSA1
IPA80R1K0CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V TO-220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock450

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