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FETs, MOSFETs - Single

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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 1/999
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2036
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 100V 1A BUMPED DIE

In Stock547,671

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 0.91nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2035
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 60V 1A BUMPED DIE

In Stock8,219

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 30V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2038
EPC

Transistors - FETs, MOSFETs - Single

GAN TRANS 100V 2.8OHM BUMPED DIE

In Stock191,355

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.044nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 8.4pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2040
EPC

Transistors - FETs, MOSFETs - Single

GANFET NCH 15V 3.4A DIE

In Stock112,765

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.93nC @ 5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 6V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2037
EPC

Transistors - FETs, MOSFETs - Single

GAN TRANS 100V 550MOHM BUMPED DI

In Stock102,489

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 550mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 0.12nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2014C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 40V 10A BUMPED DIE

In Stock66,133

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die
EPC2039
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 80V BUMPED DIE

In Stock184,470

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 40V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2007C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 100V 6A BUMPED DIE

In Stock23,228

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (5-Solder Bar)
Package / Case: Die
EPC2016C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 100V 18A BUMPED DIE

In Stock380,252

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2012C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 200V 5A BUMPED DIE

In Stock15,640

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (4-Solder Bar)
Package / Case: Die
EPC2019
EPC

Transistors - FETs, MOSFETs - Single

GAN TRANS 200V 8.5A BUMPED DIE

In Stock11,709

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2001C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 100V 36A BUMPED DIE

In Stock102,387

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (11-Solder Bar)
Package / Case: Die
EPC2015C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 40V 33A BUMPED DIE

In Stock12,187

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2049ENGRT
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 40V BUMPED DIE

In Stock2,494

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2010C
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 200V 22A BUMPED DIE

In Stock13,060

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 100V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die Outline (7-Solder Bar)
Package / Case: Die
EPC2031ENGRT
EPC

Transistors - FETs, MOSFETs - Single

GANFET NCH 60V 31A DIE

In Stock4,820

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2031
EPC

Transistors - FETs, MOSFETs - Single

GANFET NCH 60V 31A DIE

In Stock3,956

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 300V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2029
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 80V 31A BUMPED DIE

In Stock5,523

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 40V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2030
EPC

Transistors - FETs, MOSFETs - Single

GANFET NCH 40V 31A DIE

In Stock12,744

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2030ENGRT
EPC

Transistors - FETs, MOSFETs - Single

GANFET NCH 40V 31A DIE

In Stock4,373

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2022
EPC

Transistors - FETs, MOSFETs - Single

GAN TRANS 100V 3MOHM BUMPED DIE

In Stock7,248

More on Order

Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2023
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 30V 60A BUMPED DIE

In Stock8,678

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2024
EPC

Transistors - FETs, MOSFETs - Single

GANFET NCH 40V 60A DIE

In Stock2,292

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 37A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 19mA
Gate Charge (Qg) (Max) @ Vgs: -
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2020
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 60V 90A BUMPED DIE

In Stock7,375

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 31A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 30V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2021
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 80V 90A BUMPED DIE

In Stock4,960

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 40V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2033
EPC

Transistors - FETs, MOSFETs - Single

GAN TRANS 150V 7MOHM BUMPED DIE

In Stock5,389

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 75V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
EPC2032
EPC

Transistors - FETs, MOSFETs - Single

GANFET TRANS 100V 48A BUMPED DIE

In Stock136

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Manufacturer: EPC
Series: eGaN®
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 50V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die
STN3N40K3
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 1.8A SOT223

In Stock5,767

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Manufacturer: STMicroelectronics
Series: SuperMESH3™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 50V
FET Feature: -
Power Dissipation (Max): 3.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
STN3NF06L
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 4A SOT223

In Stock12,559

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Manufacturer: STMicroelectronics
Series: STripFET™ II
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
STD10P6F6
STMicroelectronics

Transistors - FETs, MOSFETs - Single

MOSFET P CH 60V 10A DPAK

In Stock8,730

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Manufacturer: STMicroelectronics
Series: DeepGATE™, STripFET™ VI
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63