Transistors | OEMstron

Part Number	Description	In Stock
TSM160P04LCRHRLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 51A 8PDFN Manufacturer: Taiwan Semiconductor Corporation Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 20V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock10,752 More on Order
TSM170N06CH C5G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 38A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock172 More on Order
TSM170N06CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 38A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock40,173 More on Order
TSM170N06PQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 44A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1556pF @ 30V Power Dissipation (Max): 73.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock219 More on Order
TSM180N03CS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 9A 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,865 More on Order
TSM180N03PQ33 RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 25A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V Power Dissipation (Max): 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock214 More on Order
TSM180P03CS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 10A 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 15V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock3,142 More on Order
TSM190N08CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 75V 190A TO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 30V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock1,276 More on Order
TSM1N45CT A3G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 500MA TO92 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Power Dissipation (Max): 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock427 More on Order
TSM1N45CT B0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 500MA TO92 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Power Dissipation (Max): 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock463 More on Order
TSM1N45CW RPG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 500MA SOT223 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Power Dissipation (Max): 2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock310 More on Order
TSM1N45DCS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 450V 500MA 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.9V @ 250mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): ±50V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 25V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock342 More on Order
TSM1N80CW RPG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 300MA SOT223 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 21.6Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Power Dissipation (Max): 2.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock4,377 More on Order
TSM1NB60CH C5G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 1A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,962 More on Order
TSM1NB60CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 1A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock13,316 More on Order
TSM1NB60CW RPG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 1A SOT223 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock3,544 More on Order
TSM1NB60SCT A3 Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO92 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock462 More on Order
TSM1NB60SCT A3G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 500MA TO92 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	In Stock107 More on Order
TSM1NB60SCT B0 Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 500MA TO92 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock168 More on Order
TSM1NB60SCT B0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 500MA TO92 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Power Dissipation (Max): 2.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	In Stock437 More on Order
TSM210N02CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 20V 6.7A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power Dissipation (Max): 1.56W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock18,851 More on Order
TSM210N06CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 210A TO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 30V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock484 More on Order
TSM220NB06CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 30V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock455 More on Order
TSM220NB06LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock244 More on Order
TSM22P10CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Power Dissipation (Max): 48W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock425 More on Order
TSM22P10CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V Power Dissipation (Max): 125W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock129 More on Order
TSM2301ACX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 2.8A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V Power Dissipation (Max): 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock43,008 More on Order
TSM2301BCX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 2.8A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 6V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock222 More on Order
TSM2301CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 2.8A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 6V Power Dissipation (Max): 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock437 More on Order
TSM2302CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 20V 3.9A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 10V Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock31,555 More on Order

TSM160P04LCRHRLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 51A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
Series: Automotive, AEC-Q101
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2712pF @ 20V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock10,752

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TSM170N06CH C5G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 38A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Power Dissipation (Max): 46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

In Stock172

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TSM170N06CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 38A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Power Dissipation (Max): 46W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock40,173

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TSM170N06PQ56 RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 44A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1556pF @ 30V
Power Dissipation (Max): 73.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock219

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TSM180N03CS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 9A 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock3,865

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TSM180N03PQ33 RGG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 25A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V
Power Dissipation (Max): 21W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (3x3)
Package / Case: 8-PowerWDFN

In Stock214

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TSM180P03CS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 30V 10A 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 15V
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock3,142

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TSM190N08CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 75V 190A TO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 30V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock1,276

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TSM1N45CT A3G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 450V 500MA TO92

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

In Stock427

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TSM1N45CT B0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 450V 500MA TO92

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

In Stock463

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TSM1N45CW RPG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 450V 500MA SOT223

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

In Stock310

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TSM1N45DCS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 450V 500MA 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.9V @ 250mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Vgs (Max): ±50V
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 25V
Power Dissipation (Max): 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock342

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TSM1N80CW RPG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 800V 300MA SOT223

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 21.6Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Power Dissipation (Max): 2.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

In Stock4,377

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TSM1NB60CH C5G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 1A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

In Stock2,962

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TSM1NB60CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 1A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock13,316

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TSM1NB60CW RPG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 1A SOT223

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

In Stock3,544

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TSM1NB60SCT A3

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO92

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

In Stock462

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TSM1NB60SCT A3G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 500MA TO92

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

In Stock107

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TSM1NB60SCT B0

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 500MA TO92

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

In Stock168

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TSM1NB60SCT B0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 500MA TO92

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

In Stock437

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TSM210N02CX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 20V 6.7A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power Dissipation (Max): 1.56W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock18,851

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TSM210N06CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 210A TO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 90A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 30V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock484

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TSM220NB06CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

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TSM220NB06LCR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock244

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TSM22P10CI C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Power Dissipation (Max): 48W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220
Package / Case: TO-220-3 Full Pack, Isolated Tab

In Stock425

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TSM22P10CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock129

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TSM2301ACX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 20V 2.8A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock43,008

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TSM2301BCX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 20V 2.8A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 6V
Power Dissipation (Max): 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock222

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TSM2301CX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 20V 2.8A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 6V
Power Dissipation (Max): 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock437

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TSM2302CX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 20V 3.9A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 10V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock31,555

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