Transistors | OEMstron

Part Number	Description	In Stock
TSM2NB60CH C5G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 2A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 25V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock303 More on Order
TSM2NB60CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 2A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 25V Power Dissipation (Max): 44W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock280 More on Order
TSM2NB65CH X0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 650V 2A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPak	In Stock156 More on Order
TSM2NB65CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 650V 2A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Power Dissipation (Max): 65W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock149 More on Order
TSM300NB06CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 30V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,420 More on Order
TSM301K12CQ RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 4.5A 6-TDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 500mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 5.2pF @ 6V Power Dissipation (Max): 6.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TDFN (2x2) Package / Case: 6-VDFN Exposed Pad	In Stock16,385 More on Order
TSM320N03CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 5.5A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 15V Power Dissipation (Max): 1.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,171 More on Order
TSM3401CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 3A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock27,626 More on Order
TSM3404CX RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 5.8A SOT23 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 400.96pF @ 15V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock119 More on Order
TSM340N06CH X0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 30A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V Power Dissipation (Max): 66W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Stub Leads, IPak	In Stock291 More on Order
TSM340N06CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V Power Dissipation (Max): 27W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock103 More on Order
TSM340N06CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 30A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V Power Dissipation (Max): 66W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,862 More on Order
TSM340N06CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V Power Dissipation (Max): 66W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock308 More on Order
TSM3443CX6 RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 20V 4.7A SOT26 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	In Stock7,713 More on Order
TSM3446CX6 RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 20V 5.3A SOT26 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	In Stock18,594 More on Order
TSM3457CX6 RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 5A SOT26 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	In Stock3,696 More on Order
TSM3481CX6 RFG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 5.7A SOT26 Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.09nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1047.98pF @ 15V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	In Stock338 More on Order
TSM35N10CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 100V 32A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1598pF @ 30V Power Dissipation (Max): 83.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,794 More on Order
TSM3N100CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 2.5A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 664pF @ 25V Power Dissipation (Max): 99W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock370 More on Order
TSM3N80CH C5G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 3A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock5,638 More on Order
TSM3N80CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 3A ITO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock379 More on Order
TSM3N80CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 3A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock299 More on Order
TSM3N80CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 800V 3A TO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock1,393 More on Order
TSM3N90CH C5G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A TO251 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,683 More on Order
TSM3N90CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A ITO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock1,939 More on Order
TSM3N90CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock291 More on Order
TSM3N90CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A TO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock1,620 More on Order
TSM4424CS RVG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 20V 8A 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock1,497 More on Order
TSM4425CS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 8V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock170 More on Order
TSM4435BCS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 9.1A 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock101 More on Order

TSM2NB60CH C5G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 2A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 25V
Power Dissipation (Max): 44W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

In Stock303

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TSM2NB60CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 2A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 25V
Power Dissipation (Max): 44W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock280

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TSM2NB65CH X0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 650V 2A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Power Dissipation (Max): 65W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Stub Leads, IPak

In Stock156

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TSM2NB65CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 650V 2A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Power Dissipation (Max): 65W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock149

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TSM300NB06CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock3,420

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TSM301K12CQ RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.5A 6-TDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 5.2pF @ 6V
Power Dissipation (Max): 6.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TDFN (2x2)
Package / Case: 6-VDFN Exposed Pad

In Stock16,385

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TSM320N03CX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 5.5A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 15V
Power Dissipation (Max): 1.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock7,171

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TSM3401CX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 30V 3A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock27,626

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TSM3404CX RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 5.8A SOT23

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 400.96pF @ 15V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

In Stock119

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TSM340N06CH X0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 30A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V
Power Dissipation (Max): 66W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Stub Leads, IPak

In Stock291

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TSM340N06CI C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V
Power Dissipation (Max): 27W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220
Package / Case: TO-220-3 Full Pack, Isolated Tab

In Stock103

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TSM340N06CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 30A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V
Power Dissipation (Max): 66W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock6,862

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TSM340N06CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 30V
Power Dissipation (Max): 66W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock308

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TSM3443CX6 RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 20V 4.7A SOT26

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-26
Package / Case: SOT-23-6

In Stock7,713

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TSM3446CX6 RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 20V 5.3A SOT26

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-26
Package / Case: SOT-23-6

In Stock18,594

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TSM3457CX6 RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 30V 5A SOT26

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 551.57pF @ 15V
Power Dissipation (Max): 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-26
Package / Case: SOT-23-6

In Stock3,696

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TSM3481CX6 RFG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 30V 5.7A SOT26

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.09nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1047.98pF @ 15V
Power Dissipation (Max): 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-26
Package / Case: SOT-23-6

In Stock338

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TSM35N10CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 100V 32A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1598pF @ 30V
Power Dissipation (Max): 83.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock6,794

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TSM3N100CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 1000V 2.5A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 664pF @ 25V
Power Dissipation (Max): 99W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock370

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TSM3N80CH C5G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 800V 3A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

In Stock5,638

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TSM3N80CI C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 800V 3A ITO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab

In Stock379

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TSM3N80CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 800V 3A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock299

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TSM3N80CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 800V 3A TO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock1,393

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TSM3N90CH C5G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 2.5A TO251

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251 (IPAK)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

In Stock2,683

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TSM3N90CI C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 2.5A ITO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220AB
Package / Case: TO-220-3 Full Pack, Isolated Tab

In Stock1,939

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TSM3N90CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 2.5A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock291

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TSM3N90CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 900V 2.5A TO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V
Power Dissipation (Max): 94W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock1,620

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TSM4424CS RVG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 20V 8A 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock1,497

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TSM4425CS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 8V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock170

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TSM4435BCS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 30V 9.1A 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock101

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