Transistors | OEMstron

Part Number	Description	In Stock
TSM040N03CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 90A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 88W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,475 More on Order
TSM042N03CS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 30A 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 7W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,552 More on Order
TSM045NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 108A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1194pF @ 15V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock4,345 More on Order
TSM045NB06CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6870pF @ 30V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock4,125 More on Order
TSM048NB06LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6253pF @ 30V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,054 More on Order
TSM052N06PQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3686pF @ 30V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock500 More on Order
TSM055N03EPQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock4,069 More on Order
TSM055N03PQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power Dissipation (Max): 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock212 More on Order
TSM05N03CW RPG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 5A SOT223 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock438 More on Order
TSM060N03CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 70A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,032 More on Order
TSM060N03ECP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 70A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,294 More on Order
TSM060N03PQ33 RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 62A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1342pF @ 15V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock160 More on Order
TSM061NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 88A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1133pF @ 15V Power Dissipation (Max): 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock177 More on Order
TSM061NA03CV RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 66A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 15V Power Dissipation (Max): 44.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock274 More on Order
TSM070NA04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 91A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1469pF @ 20V Power Dissipation (Max): 113W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,680 More on Order
TSM070NB04CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2403pF @ 20V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,556 More on Order
TSM070NB04LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET SINGLE N-CHANNEL TRENCH Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2151pF @ 20V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,467 More on Order
TSM080N03EPQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 55A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power Dissipation (Max): 54W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,706 More on Order
TSM080N03PQ56 RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 73A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 843pF @ 15V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock4,498 More on Order
TSM085N03PQ33 RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 52A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 817pF @ 15V Power Dissipation (Max): 37W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock365 More on Order
TSM085P03CS RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 30V 34A 8SOP Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3216pF @ 15V Power Dissipation (Max): 14W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock6,569 More on Order
TSM085P03CV RGG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 64A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3234pF @ 15V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (3x3) Package / Case: 8-PowerWDFN	In Stock474 More on Order
TSM088NA03CR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 61A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V Power Dissipation (Max): 56W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock389 More on Order
TSM089N08LCR RLG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 67A 8PDFN Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6119pF @ 40V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,868 More on Order
TSM090N03CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 50A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock436 More on Order
TSM090N03ECP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 30V 50A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock19,172 More on Order
TSM100N06CZ C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 100A TO220 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4382pF @ 30V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock891 More on Order
TSM10N06CP ROG Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 60V 10A TO252 Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock258 More on Order
TSM10N60CI C0 Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock274 More on Order
TSM10N60CI C0G Taiwan Semiconductor Corporation	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL Manufacturer: Taiwan Semiconductor Corporation FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	In Stock258 More on Order

TSM040N03CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 90A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power Dissipation (Max): 88W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock3,475

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TSM042N03CS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 30A 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Power Dissipation (Max): 7W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock8,552

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TSM045NA03CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 108A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1194pF @ 15V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock4,345

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TSM045NB06CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6870pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock4,125

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TSM048NB06LCR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6253pF @ 30V
Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock6,054

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TSM052N06PQ56 RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 100A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 3686pF @ 30V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock500

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TSM055N03EPQ56 RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Power Dissipation (Max): 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock4,069

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TSM055N03PQ56 RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 80A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Power Dissipation (Max): 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock212

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TSM05N03CW RPG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 5A SOT223

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V
Power Dissipation (Max): 3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

In Stock438

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TSM060N03CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 70A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Power Dissipation (Max): 54W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock8,032

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TSM060N03ECP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 70A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 25V
Power Dissipation (Max): 54W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock3,294

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TSM060N03PQ33 RGG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 62A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1342pF @ 15V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (3x3)
Package / Case: 8-PowerWDFN

In Stock160

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TSM061NA03CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 88A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1133pF @ 15V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock177

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TSM061NA03CV RGG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 66A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 15V
Power Dissipation (Max): 44.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (3x3)
Package / Case: 8-PowerWDFN

In Stock274

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TSM070NA04LCR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 91A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1469pF @ 20V
Power Dissipation (Max): 113W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock3,680

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TSM070NB04CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2403pF @ 20V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock3,556

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TSM070NB04LCR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET SINGLE N-CHANNEL TRENCH

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2151pF @ 20V
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock3,467

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TSM080N03EPQ56 RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 55A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power Dissipation (Max): 54W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock3,706

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TSM080N03PQ56 RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 73A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 843pF @ 15V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock4,498

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TSM085N03PQ33 RGG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 52A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 817pF @ 15V
Power Dissipation (Max): 37W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (3x3)
Package / Case: 8-PowerWDFN

In Stock365

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TSM085P03CS RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CHANNEL 30V 34A 8SOP

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3216pF @ 15V
Power Dissipation (Max): 14W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

In Stock6,569

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TSM085P03CV RGG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 64A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3234pF @ 15V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (3x3)
Package / Case: 8-PowerWDFN

In Stock474

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TSM088NA03CR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 61A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
Power Dissipation (Max): 56W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock389

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TSM089N08LCR RLG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 67A 8PDFN

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6119pF @ 40V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PDFN (5x6)
Package / Case: 8-PowerTDFN

In Stock3,868

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TSM090N03CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 50A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock436

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TSM090N03ECP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 50A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Power Dissipation (Max): 40W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock19,172

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TSM100N06CZ C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 100A TO220

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4382pF @ 30V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

In Stock891

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TSM10N06CP ROG

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 60V 10A TO252

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

In Stock258

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TSM10N60CI C0

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220
Package / Case: TO-220-3 Full Pack, Isolated Tab

In Stock274

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TSM10N60CI C0G

Taiwan Semiconductor Corporation

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL

Manufacturer: Taiwan Semiconductor Corporation
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45.8nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1738pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ITO-220
Package / Case: TO-220-3 Full Pack, Isolated Tab

In Stock258

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