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Part Number	Description	In Stock
SUM70101EL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 120A TO263 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock132 More on Order
SUM70N03-09CP-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 70A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Power Dissipation (Max): 3.75W (Ta), 93W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock193 More on Order
SUM70N04-07L-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 70A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock237 More on Order
SUM75N06-09L-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.75W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock474 More on Order
SUM75N15-18P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 75A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4180pF @ 75V Power Dissipation (Max): 3.12W (Ta), 312.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock264 More on Order
SUM80090E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 128A D2PAK Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3425pF @ 75V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock388 More on Order
SUM85N03-06P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 85A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock483 More on Order
SUM85N15-19-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 85A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 25V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock460 More on Order
SUM90140E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 90A D2PAK Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4132pF @ 100V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock140 More on Order
SUM90142E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 90A TO263 Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock1,202 More on Order
SUM90220E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 64A D2PAK Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock122 More on Order
SUM90330E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 35.1A D2PAK Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock132 More on Order
SUM90N03-2M2P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 257nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12065pF @ 15V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock461 More on Order
SUM90N04-3M3P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock240 More on Order
SUM90N06-4M4P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock483 More on Order
SUM90N06-5M5P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 30V Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock300 More on Order
SUM90N08-4M8P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 40V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock366 More on Order
SUM90N08-6M2P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock381 More on Order
SUM90N08-7M6P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3528pF @ 30V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock347 More on Order
SUM90N10-8M2P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 50V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock10,582 More on Order
SUM90P10-19-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 50V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock490 More on Order
SUM90P10-19L-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 90A D2PAK Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock293 More on Order
SUP10250E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 63A TO220AB Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock325 More on Order
SUP18N15-95-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 18A TO220-3 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Power Dissipation (Max): 88W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	In Stock317 More on Order
SUP25P10-138-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 16.3A TO220AB Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Power Dissipation (Max): 3.1W (Ta), 73.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock208 More on Order
SUP28N15-52-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 28A TO220AB Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock120 More on Order
SUP36N20-54P-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 36A TO220AB Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 15V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Power Dissipation (Max): 3.12W (Ta), 166W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock107 More on Order
SUP40010EL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 120A TO220AB Manufacturer: Vishay Siliconix Series: ThunderFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11155pF @ 30V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock679 More on Order
SUP40012EL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V TO-220 Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10930pF @ 20V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock1,535 More on Order
SUP40N10-30-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 40A TO220AB Manufacturer: Vishay Siliconix Series: TrenchFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock228 More on Order

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