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Transistors

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SUD50P10-43-E3
SUD50P10-43-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 100V 38A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 9.4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 50V
  • Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
  • Operating Temperature: -50°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock477

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SUD50P10-43L-E3
SUD50P10-43L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 100V 37.1A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
  • Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock15,819

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SUD50P10-43L-GE3
SUD50P10-43L-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 100V 37.1A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
  • Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock406

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SUD70090E-GE3
SUD70090E-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 50A DPAK TO252

  • Manufacturer: Vishay Siliconix
  • Series: ThunderFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,867

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SUD80460E-GE3
SUD80460E-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 42A TO252AA

  • Manufacturer: Vishay Siliconix
  • Series: ThunderFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V
  • Power Dissipation (Max): 65.2W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock542

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SUD90330E-GE3
SUD90330E-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 35.8A TO252AA

  • Manufacturer: Vishay Siliconix
  • Series: ThunderFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock273

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SUG80050E-GE3
SUG80050E-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 100A TO247AC

  • Manufacturer: Vishay Siliconix
  • Series: ThunderFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 75V
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
In Stock136

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SUG90090E-GE3
SUG90090E-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 100A TO247AC

  • Manufacturer: Vishay Siliconix
  • Series: ThunderFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 129nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 100V
  • Power Dissipation (Max): 395W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
In Stock181

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SUM09N20-270-E3
SUM09N20-270-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 9A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock365

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SUM10250E-GE3
SUM10250E-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 63.5A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: ThunderFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3002pF @ 125V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock145

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SUM110N03-03P-E3
SUM110N03-03P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock150

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SUM110N03-04P-E3
SUM110N03-04P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock492

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SUM110N04-03-E3
SUM110N04-03-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8250pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock245

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SUM110N04-03P-E3
SUM110N04-03P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock498

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SUM110N04-04-E3
SUM110N04-04-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock370

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SUM110N04-05H-E3
SUM110N04-05H-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock443

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SUM110N04-2M1P-E3
SUM110N04-2M1P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 29A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 20V
  • Power Dissipation (Max): 3.13W (Ta), 312W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock202

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SUM110N04-2M3L-E3
SUM110N04-2M3L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock340

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SUM110N05-06L-E3
SUM110N05-06L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Power Dissipation (Max): 3.7W (Ta), 158W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock495

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SUM110N06-3M4L-E3
SUM110N06-3M4L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock215

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SUM110N06-3M9H-E3
SUM110N06-3M9H-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15800pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock185

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SUM110N08-07P-E3
SUM110N08-07P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 30V
  • Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock324

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SUM110N10-09-E3
SUM110N10-09-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,921

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SUM110P04-04L-E3
SUM110P04-04L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock14,592

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SUM110P04-05-E3
SUM110P04-05-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
  • Power Dissipation (Max): 15W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock186

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SUM110P06-07L-E3
SUM110P06-07L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock458

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SUM110P06-08L-E3
SUM110P06-08L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
  • Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock7,644

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SUM110P08-11-E3
SUM110P08-11-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 80V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11500pF @ 40V
  • Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock144

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SUM110P08-11L-E3
SUM110P08-11L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 80V 110A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V
  • Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,471

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SUM120N04-1M7L-GE3
SUM120N04-1M7L-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A D2PAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11685pF @ 20V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock464

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