Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Transistors

Records 64,903
Page 1892/2164
Image
Part Number
Description
In Stock
Quantity
SUD50N03-11-E3
SUD50N03-11-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V
  • Power Dissipation (Max): 7.5W (Ta), 62.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock261

More on Order

SUD50N03-12P-E3
SUD50N03-12P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Power Dissipation (Max): 6.5W (Ta), 46.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock112

More on Order

SUD50N03-12P-GE3
SUD50N03-12P-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 16.8A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock295

More on Order

SUD50N03-16P-E3
SUD50N03-16P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
  • Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock463

More on Order

SUD50N03-16P-GE3
SUD50N03-16P-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
  • Power Dissipation (Max): 6.5W (Ta), 40.8W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock365

More on Order

SUD50N04-05L-E3
SUD50N04-05L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 115A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock184

More on Order

SUD50N04-09H-E3
SUD50N04-09H-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
  • Power Dissipation (Max): 83.3W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock440

More on Order

SUD50N04-16P-E3
SUD50N04-16P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 9.8A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1655pF @ 20V
  • Power Dissipation (Max): 3.1W (Ta), 35.7W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock138

More on Order

SUD50N04-37P-T4-E3
SUD50N04-37P-T4-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 5.4A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
  • Power Dissipation (Max): 2W (Ta), 10.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock206

More on Order

SUD50N04-8M8P-4GE3
SUD50N04-8M8P-4GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 14A TO-252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V
  • Power Dissipation (Max): 3.1W (Ta), 48.1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock181

More on Order

SUD50N06-07L-E3
SUD50N06-07L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 96A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock436

More on Order

SUD50N06-07L-GE3
SUD50N06-07L-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 96A DPAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V
  • Power Dissipation (Max): 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock125

More on Order

SUD50N06-08H-E3
SUD50N06-08H-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 93A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock438

More on Order

SUD50N06-09L-E3
SUD50N06-09L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock5,324

More on Order

SUD50N10-18P-E3
SUD50N10-18P-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 8.2A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
  • Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock335

More on Order

SUD50N10-18P-GE3
SUD50N10-18P-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 8.2A DPAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
  • Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock122

More on Order

SUD50N10-34P-T4-E3
SUD50N10-34P-T4-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 5.9A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Power Dissipation (Max): 2.5W (Ta), 56W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock273

More on Order

SUD50P04-08-GE3
SUD50P04-08-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 50A DPAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 159nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 20V
  • Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock316

More on Order

SUD50P04-09L-E3
SUD50P04-09L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,655

More on Order

SUD50P04-13L-E3
SUD50P04-13L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 60A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock274

More on Order

SUD50P04-13L-GE3
SUD50P04-13L-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 60A DPAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock132

More on Order

SUD50P04-15-E3
SUD50P04-15-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 100W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock351

More on Order

SUD50P04-23-E3
SUD50P04-23-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 8.2A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 20V
  • Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock492

More on Order

SUD50P04-23-GE3
SUD50P04-23-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 8.2A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 20V
  • Power Dissipation (Max): 3.1W (Ta), 45.4W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock250

More on Order

SUD50P04-40P-T4-E3
SUD50P04-40P-T4-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 40V 6A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1555pF @ 20V
  • Power Dissipation (Max): 2.4W (Ta), 24W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock107

More on Order

SUD50P06-15-GE3
SUD50P06-15-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 50A TO-252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Power Dissipation (Max): 2.5W (Ta), 113W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock39,911

More on Order

SUD50P06-15L-E3
SUD50P06-15L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock53,791

More on Order

SUD50P06-15L-T4-E3
SUD50P06-15L-T4-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock392

More on Order

SUD50P08-25L-E3
SUD50P08-25L-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 80V 50A DPAK

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
  • Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock15,931

More on Order

SUD50P08-26-E3
SUD50P08-26-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 80V 50A TO252

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 12.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 40V
  • Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock191

More on Order