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Transistors

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IPB100N06S3-03
IPB100N06S3-03

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 100A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock221

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IPB100N06S3-04
IPB100N06S3-04

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 100A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 314nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14230pF @ 25V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock466

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IPB100N06S3L-03
IPB100N06S3L-03

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 100A TO263-3-2

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 550nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 26240pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock155

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IPB100N06S3L-04
IPB100N06S3L-04

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 100A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock155

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IPB100N08S207ATMA1
IPB100N08S207ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock321

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IPB100N08S2L07ATMA1
IPB100N08S2L07ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock204

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IPB100N10S305ATMA1
IPB100N10S305ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock118

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IPB100N12S305ATMA1
IPB100N12S305ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 120V 100A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
In Stock459

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IPB107N20N3GATMA1
IPB107N20N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 88A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,694

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IPB107N20NAATMA1
IPB107N20NAATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 88A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100pF @ 100V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock2,782

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IPB108N15N3GATMA1
IPB108N15N3GATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 83A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock10,734

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IPB10N03LB
IPB10N03LB

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 50A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V
  • Power Dissipation (Max): 58W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
In Stock425

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IPB10N03LB G
IPB10N03LB G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 50A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1639pF @ 15V
  • Power Dissipation (Max): 58W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
In Stock354

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IPB110N06L G
IPB110N06L G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 78A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 78A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 30V
  • Power Dissipation (Max): 158W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock425

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IPB110N20N3LFATMA1
IPB110N20N3LFATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200 D2PAK-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™ 3
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 88A, 10V
  • Vgs(th) (Max) @ Id: 4.2V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 100V
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock124

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IPB110P06LMATMA1
IPB110P06LMATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 5.55mA
  • Gate Charge (Qg) (Max) @ Vgs: 281nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 30V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock259

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IPB114N03L G
IPB114N03L G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
  • Power Dissipation (Max): 38W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock105

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IPB117N20NFDATMA1
IPB117N20NFDATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 84A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 84A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6650pF @ 100V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock372

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IPB11N03LA
IPB11N03LA

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 30A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
  • Power Dissipation (Max): 52W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock336

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IPB11N03LA G
IPB11N03LA G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 30A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
  • Power Dissipation (Max): 52W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock176

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IPB120N03S4L03ATMA1
IPB120N03S4L03ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO263-3

  • Manufacturer: Infineon Technologies
  • Series: Automotive, AEC-Q101, OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
  • Power Dissipation (Max): 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock465

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IPB120N04S3-02
IPB120N04S3-02

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14300pF @ 25V
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock151

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IPB120N04S401ATMA1
IPB120N04S401ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A TO263-3-2

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock159

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IPB120N04S402ATMA1
IPB120N04S402ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 120A TO263-3-2

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10740pF @ 25V
  • Power Dissipation (Max): 158W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,570

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IPB120N04S404ATMA1
IPB120N04S404ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO263-3

  • Manufacturer: Infineon Technologies
  • Series: Automotive, AEC-Q101, OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
  • Power Dissipation (Max): 79W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock209

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IPB120N04S4L02ATMA1
IPB120N04S4L02ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH TO263-3

  • Manufacturer: Infineon Technologies
  • Series: Automotive, AEC-Q101, OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Vgs (Max): +20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V
  • Power Dissipation (Max): 158W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock220

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IPB120N06N G
IPB120N06N G

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 75A TO-263

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V
  • Power Dissipation (Max): 158W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock500

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IPB120N06S402ATMA1
IPB120N06S402ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock315

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IPB120N06S402ATMA2
IPB120N06S402ATMA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: Automotive, AEC-Q101, OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock474

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IPB120N06S403ATMA1
IPB120N06S403ATMA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A TO263-3

  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
  • Power Dissipation (Max): 167W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock484

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