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Transistors

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IPA60R360P7SXKSA1
IPA60R360P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 9A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
  • Power Dissipation (Max): 22W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock2,189

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IPA60R360P7XKSA1
IPA60R360P7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 650V 9A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 400V
  • Power Dissipation (Max): 22W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock544

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IPA60R380C6XKSA1
IPA60R380C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 10.6A TO220-FP

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock724

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IPA60R380E6XKSA1
IPA60R380E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 10.6A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock383

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IPA60R380P6XKSA1
IPA60R380P6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO220FP-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock902

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IPA60R385CPXKSA1
IPA60R385CPXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9A TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock1,464

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IPA60R400CEXKSA1
IPA60R400CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V
  • Power Dissipation (Max): 31W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock498

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IPA60R450E6XKSA1
IPA60R450E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock161

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IPA60R460CEXKSA1
IPA60R460CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 100V
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock537

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IPA60R520C6XKSA1
IPA60R520C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 8.1A TO220-FP

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
  • Power Dissipation (Max): 29W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock141

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IPA60R520CPXKSA1
IPA60R520CPXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 6.8A TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock267

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IPA60R520E6XKSA1
IPA60R520E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 8.1A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
  • Power Dissipation (Max): 29W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock174

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IPA60R600C6XKSA1
IPA60R600C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.3A TO220-FP

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock274

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IPA60R600CPXKSA1
IPA60R600CPXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 6.1A TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock179

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IPA60R600E6XKSA1
IPA60R600E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 7.3A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock259

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IPA60R600P6XKSA1
IPA60R600P6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4.9A TO220-FP

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P6
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock643

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IPA60R600P7SE8228XKSA1
IPA60R600P7SE8228XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

CONSUMER

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V
  • Power Dissipation (Max): 21W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock362

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IPA60R600P7SXKSA1
IPA60R600P7SXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 6A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V
  • Power Dissipation (Max): 21W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock304

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IPA60R600P7XKSA1
IPA60R600P7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 600V 6A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ P7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V
  • Power Dissipation (Max): 21W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock650

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IPA60R650CEXKSA1
IPA60R650CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
  • Power Dissipation (Max): 28W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock569

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IPA60R750E6XKSA1
IPA60R750E6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 5.7A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock366

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IPA60R800CEXKSA1
IPA60R800CEXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V TO-220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CE
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock102

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IPA60R950C6XKSA1
IPA60R950C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4.4A TO220-FP

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
  • Power Dissipation (Max): 26W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock716

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IPA65R045C7XKSA1
IPA65R045C7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.25mA
  • Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock103

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IPA65R065C7XKSA1
IPA65R065C7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock476

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IPA65R095C7XKSA1
IPA65R095C7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 590µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock285

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IPA65R099C6XKSA1
IPA65R099C6XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 38A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock272

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IPA65R110CFDXKSA1
IPA65R110CFDXKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 31.2A TO220

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
  • Power Dissipation (Max): 34.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock161

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IPA65R110CFDXKSA2
IPA65R110CFDXKSA2

Infineon Technologies

Transistors - FETs, MOSFETs - Single

HIGH POWER_LEGACY

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ CFD2
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V
  • Power Dissipation (Max): 34.7W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
In Stock419

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IPA65R125C7XKSA1
IPA65R125C7XKSA1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V TO220-3

  • Manufacturer: Infineon Technologies
  • Series: CoolMOS™ C7
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
In Stock364

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