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Transistors

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DMC1018UPD-13
DMC1018UPD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V POWERDI5060

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
In Stock311

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DMC1028UFDB-13
DMC1028UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V/20V 6UDFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock385

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DMC1028UFDB-7
DMC1028UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V/20V 6UDFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock20,070

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DMC1029UFDB-13
DMC1029UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 6UDFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock296

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DMC1029UFDB-7
DMC1029UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 6UDFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock201

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DMC1030UFDB-13
DMC1030UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
  • Power - Max: 1.36W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock388

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DMC1030UFDB-7
DMC1030UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V 24V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
  • Power - Max: 1.36W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock243

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DMC1030UFDBQ-13
DMC1030UFDBQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 5.1A UDFN2020

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock158

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DMC1030UFDBQ-7
DMC1030UFDBQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 5.1A UDFN2020

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V
  • Power - Max: 1.36W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock393

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DMC1229UFDB-13
DMC1229UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock364

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DMC1229UFDB-7
DMC1229UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock3,750

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DMC2004DWK-7
DMC2004DWK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT-363

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock393,178

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DMC2004LPK-7
DMC2004LPK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6-DFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X1-DFN1612-6
In Stock4,995

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DMC2004VK-7
DMC2004VK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT-563

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock40,799

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DMC2020USD-13
DMC2020USD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 7.8A/6.3A 8SO

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A, 6.3A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock12,486

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DMC2025UFDB-13
DMC2025UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock170

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DMC2025UFDB-7
DMC2025UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock492

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DMC2038LVT-7
DMC2038LVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V TSOT26

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock170,733

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DMC2038LVTQ-7
DMC2038LVTQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V 24V TSOT26

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: N and P-Channel Complementary
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V
  • Power - Max: 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock284

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DMC2041UFDB-13
DMC2041UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6UDFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock191

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DMC2041UFDB-7
DMC2041UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 6UDFN

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock171

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DMC2053UVT-13
DMC2053UVT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26 T&R

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock335

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DMC2053UVT-7
DMC2053UVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26 T&R

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock189

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DMC2057UVT-13
DMC2057UVT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26 T&R

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock455

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DMC2057UVT-7
DMC2057UVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26 T&R

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel Complementary
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock479

More on Order

DMC21D1UDA-7B
DMC21D1UDA-7B

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V X2DFN0806-6

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
In Stock216

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DMC2400UV-13
DMC2400UV-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock34,314

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DMC2400UV-7
DMC2400UV-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock266,239

More on Order

DMC2450UV-13
DMC2450UV-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock479

More on Order

DMC2450UV-7
DMC2450UV-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock4,348

More on Order