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Part Number	Description	In Stock
CSD87588N Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 25A 5PTAB Series: NexFET™ FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-XFLGA Supplier Device Package: 5-PTAB (3x2.5)	In Stock123,097 More on Order
CSD87588NT Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 25A 5PTAB Series: NexFET™ FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (5x3.5)	In Stock7,856 More on Order
CSD88537ND Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A 8SOIC Series: NexFET™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock52,380 More on Order
CSD88537NDT Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A 8SOIC Series: NexFET™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock5,292 More on Order
CSD88539ND Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A 8SOIC Series: NexFET™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock3,758 More on Order
CSD88539NDT Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A 8SOIC Series: NexFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 30V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock3,123 More on Order
CSD88584Q5DC Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V 22-VSON-CLIP Series: NexFET™ FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	In Stock190 More on Order
CSD88584Q5DCT Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V 22-VSON-CLIP Series: NexFET™ FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	In Stock3,013 More on Order
CSD88599Q5DC Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 22-VSON-CLIP Series: NexFET™ FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	In Stock172 More on Order
CSD88599Q5DCT Texas Instruments	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 22-VSON-CLIP Series: NexFET™ FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	In Stock405 More on Order
CTLDM303N-M832DS BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET DUAL N-CHANNEL Manufacturer: Central Semiconductor Corp FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 1.65W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock233 More on Order
CTLDM303N-M832DS TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.6A TLM832DS Manufacturer: Central Semiconductor Corp FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 40mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 1.65W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock154 More on Order
CTLDM304P-M832DS TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.2A TLM832DS Manufacturer: Central Semiconductor Corp FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 70mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 1.65W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock139 More on Order
CTLDM7120-M832DS BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET DUAL N-CHANNEL Manufacturer: Central Semiconductor Corp FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1.65W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock344 More on Order
CTLDM7120-M832DS TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 1A Manufacturer: Central Semiconductor Corp FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V Power - Max: 1.65W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock236 More on Order
CTLDM8120-M832DS BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET DUAL N-CHANNEL Manufacturer: Central Semiconductor Corp FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V Power - Max: 1.65W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock151 More on Order
CTLDM8120-M832DS TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET DUAL N-CHANNEL Manufacturer: Central Semiconductor Corp FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.56nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 16V Power - Max: 1.65W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	In Stock219 More on Order
CWDM305ND TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5.8A 8SOIC Manufacturer: Central Semiconductor Corp FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 30mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock286 More on Order
CWDM305PD TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 5.3A 8SOIC Manufacturer: Central Semiconductor Corp FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 72mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock425 More on Order
DF11MR12W1M1B11BOMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET MODULE 1200V 50A Manufacturer: Infineon Technologies Series: CoolSiC™+ FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock221 More on Order
DF11MR12W1M1B11BPSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET MOD 1200V 50A Manufacturer: Infineon Technologies Series: CoolSiC™+ FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	In Stock419 More on Order
DF23MR12W1M1B11BOMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET MODULE 1200V 25A Manufacturer: Infineon Technologies Series: CoolSiC™+ FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id: 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock145 More on Order
DF23MR12W1M1B11BPSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET MOD 1200V 25A Manufacturer: Infineon Technologies Series: CoolSiC™+ FET Type: 2 N-Channel (Dual) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1BM-2	In Stock558 More on Order
DI9942T Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 2.5A 8-SOIC Manufacturer: Diodes Incorporated FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Power - Max: 1.6W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	In Stock171 More on Order
DI9945T Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3.5A 8-SOIC Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 25V Power - Max: 2W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	In Stock290 More on Order
DI9952T Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 2.9A 8-SOIC Manufacturer: Diodes Incorporated FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Power - Max: 2W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	In Stock323 More on Order
DI9956T Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.7A 8-SOIC Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A Power - Max: 2W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	In Stock404 More on Order
DMC1015UPD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 8V 24V POWERDI5060-8 Manufacturer: Diodes Incorporated FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	In Stock3,272 More on Order
DMC1016UPD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 8V 24V POWERDI5060-8 Manufacturer: Diodes Incorporated FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	In Stock305 More on Order
DMC1017UPD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 9.5A/6.9A SMD Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 9.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V, 23.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V, 2100pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	In Stock228 More on Order

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