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Part Number	Description	In Stock
SPB73N03S2L-08 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 73A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock484 More on Order
SPB73N03S2L-08 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 73A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock165 More on Order
SPB73N03S2L08T Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 73A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 2V @ 55µA Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V Power Dissipation (Max): 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock175 More on Order
SPB77N06S2-12 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V Power Dissipation (Max): 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock191 More on Order
SPB80N03S2-03 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock247 More on Order
SPB80N03S203GATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock124 More on Order
SPB80N03S2L-03 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock265 More on Order
SPB80N03S2L-03 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock231 More on Order
SPB80N03S2L-04 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock234 More on Order
SPB80N03S2L-04 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock303 More on Order
SPB80N03S2L-05 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock371 More on Order
SPB80N03S2L-05 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock498 More on Order
SPB80N03S2L05T Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V Vgs(th) (Max) @ Id: 2V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 89.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 25V Power Dissipation (Max): 167W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock455 More on Order
SPB80N03S2L-06 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock255 More on Order
SPB80N03S2L-06 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock106 More on Order
SPB80N03S2L06T Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock364 More on Order
SPB80N04S2-04 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6980pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock210 More on Order
SPB80N04S2-H4 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock327 More on Order
SPB80N04S2L-03 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 213nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock359 More on Order
SPB80N06S08ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock316 More on Order
SPB80N06S2-05 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6790pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock228 More on Order
SPB80N06S2-07 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock437 More on Order
SPB80N06S2-08 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Power Dissipation (Max): 215W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock413 More on Order
SPB80N06S2-09 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3140pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock171 More on Order
SPB80N06S2-H5 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock208 More on Order
SPB80N06S2L-05 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7530pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock426 More on Order
SPB80N06S2L-06 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Vgs(th) (Max) @ Id: 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock243 More on Order
SPB80N06S2L-07 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4210pF @ 25V Power Dissipation (Max): 210W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock251 More on Order
SPB80N06S2L-09 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 2V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock394 More on Order
SPB80N06S2L-11 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 80A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Power Dissipation (Max): 158W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock194 More on Order

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