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Part Number	Description	In Stock
SPB100N08S2-07 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 66A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6020pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock112 More on Order
SPB100N08S2L-07 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 100A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 68A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7130pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock135 More on Order
SPB10N10 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10.3A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock491 More on Order
SPB10N10 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10.3A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 4V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 426pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock130 More on Order
SPB10N10L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10.3A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 444pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock219 More on Order
SPB10N10L G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10.3A TO-263 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 444pF @ 25V Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock404 More on Order
SPB11N60C3ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11A D2PAK Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock1,647 More on Order
SPB11N60S5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-263 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock283 More on Order
SPB12N50C3ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 11.6A TO-263 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock137 More on Order
SPB160N04S203CTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 160A D2PAK-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7320pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock430 More on Order
SPB160N04S2L03DTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 160A D2PAK-7 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock397 More on Order
SPB16N50C3ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 16A TO-263 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.9V @ 675µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock281 More on Order
SPB17N80C3ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 17A D2PAK Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,315 More on Order
SPB18P06P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 18.7A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 81.1W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock402 More on Order
SPB18P06PGATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 18.7A TO-263 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Power Dissipation (Max): 81.1W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock416 More on Order
SPB20N60C3ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20.7A D2PAK Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock482 More on Order
SPB20N60S5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO-263 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock294 More on Order
SPB21N10 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 21A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock472 More on Order
SPB21N10 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 21A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock438 More on Order
SPB21N10T Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 21A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 38.4nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock449 More on Order
SPB21N50C3ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 560V 21A TO-263 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,177 More on Order
SPB35N10 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock296 More on Order
SPB35N10 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock387 More on Order
SPB35N10T Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 35A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock455 More on Order
SPB42N03S2L-13 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 42A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2V @ 37µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock113 More on Order
SPB42N03S2L-13 G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 42A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2V @ 37µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock432 More on Order
SPB42N03S2L13T Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 42A D2PAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.6mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 2V @ 37µA Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 25V Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock455 More on Order
SPB47N10 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 47A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock421 More on Order
SPB47N10L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 47A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Power Dissipation (Max): 175W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock233 More on Order
SPB70N10L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 70A D2PAK Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock100 More on Order

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