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Records 64,903

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Part Number	Description	In Stock
SIHG24N65EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock874 More on Order
SIHG24N65E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,261 More on Order
SIHG25N40D-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 25A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,012 More on Order
SIHG25N40D-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 25A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1707pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock554 More on Order
SIHG25N50E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 26A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock834 More on Order
SIHG25N60EFL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 25A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2274pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock838 More on Order
SIHG28N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 28A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2714pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock237 More on Order
SIHG28N65EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 28A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 117mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3249pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock324 More on Order
SIHG30N60AEL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V TO-247AC Manufacturer: Vishay Siliconix Series: EL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock279 More on Order
SIHG30N60E-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock925 More on Order
SIHG30N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 29A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock750 More on Order
SIHG32N50D-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock340 More on Order
SIHG32N50D-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Power Dissipation (Max): 390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock922 More on Order
SIHG33N60E-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 33A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock314 More on Order
SIHG33N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 33A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3454pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock340 More on Order
SIHG33N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 33A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,145 More on Order
SIHG33N65EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 31.6A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4026pF @ 100V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock449 More on Order
SIHG33N65E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 32.4A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 100V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,349 More on Order
SIHG35N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO-247AC Manufacturer: Vishay Siliconix Series: EF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2568pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,220 More on Order
SIHG35N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 32A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock815 More on Order
SIHG40N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 40A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4436pF @ 100V Power Dissipation (Max): 329W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock733 More on Order
SIHG44N65EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 46A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 278nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5892pF @ 100V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock684 More on Order
SIHG460B-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3094pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock242 More on Order
SIHG47N60AEF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V TO-247AC Manufacturer: Vishay Siliconix Series: *	In Stock402 More on Order
SIHG47N60AE-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 43A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 100V Power Dissipation (Max): 313W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock499 More on Order
SIHG47N60AEL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V Manufacturer: Vishay Siliconix Series: EL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 100V Power Dissipation (Max): 379W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock385 More on Order
SIHG47N60E-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 100V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock714 More on Order
SIHG47N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4854pF @ 100V Power Dissipation (Max): 379W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock736 More on Order
SIHG47N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 47A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 100V Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock512 More on Order
SIHG47N65E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 47A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V Power Dissipation (Max): 417W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock948 More on Order

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