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Records 64,903

Page 1763/2164

Part Number	Description	In Stock
SIHG050N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3459pF @ 100V Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock312 More on Order
SIHG065N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET E SERIES 600V TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock989 More on Order
SIHG100N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET E SERIES 600V TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1851pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock478 More on Order
SIHG11N80E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 100V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock931 More on Order
SIHG120N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET E SERIES 600V TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1562pF @ 100V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,315 More on Order
SIHG14N50D-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1144pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock184 More on Order
SIHG14N50D-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1144pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock925 More on Order
SIHG15N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 100V Power Dissipation (Max): 180W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock676 More on Order
SIHG16N50C-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 16A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock743 More on Order
SIHG17N60D-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock175 More on Order
SIHG17N60D-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 17A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 100V Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock214 More on Order
SIHG17N80E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 15A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2408pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock392 More on Order
SIHG180N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET E SERIES 600V TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 100V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,071 More on Order
SIHG20N50C-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 20A TO247 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2942pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock6,898 More on Order
SIHG20N50E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 19A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 100V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock265 More on Order
SIHG21N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock591 More on Order
SIHG21N65EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 21A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,082 More on Order
SIHG21N80AE-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V TO-247AC Manufacturer: Vishay Siliconix Series: *	In Stock431 More on Order
SIHG22N50D-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 100V Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock808 More on Order
SIHG22N50D-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 22A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 100V Power Dissipation (Max): 312W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock154 More on Order
SIHG22N60AE-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock814 More on Order
SIHG22N60AEL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 600V Manufacturer: Vishay Siliconix Series: EL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock527 More on Order
SIHG22N60E-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock299 More on Order
SIHG22N60EF-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 19A TO-247AC Manufacturer: Vishay Siliconix Series: EF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 100V Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock182 More on Order
SIHG22N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock453 More on Order
SIHG22N60EL-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 21A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock489 More on Order
SIHG22N60S-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 22A TO247 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5620pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock347 More on Order
SIHG22N65E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 22A TO-247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2415pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock340 More on Order
SIHG23N60E-GE3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 23A TO247AC Manufacturer: Vishay Siliconix Series: E FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock1,411 More on Order
SIHG24N65E-E3 Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO247AC Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	In Stock373 More on Order

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