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Transistors

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SI1305DL-T1-GE3
SI1305DL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 0.86A SC-70-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock485

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SI1305EDL-T1-E3
SI1305EDL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 0.86A SOT323-3

  • Manufacturer: Vishay Siliconix
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock449

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SI1305EDL-T1-GE3
SI1305EDL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 0.86A SOT323-3

  • Manufacturer: Vishay Siliconix
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock232

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SI1307DL-T1-E3
SI1307DL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 0.85A SOT323-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock442

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SI1307DL-T1-GE3
SI1307DL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 0.85A SOT323-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock300

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SI1307EDL-T1-E3
SI1307EDL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 0.85A SOT323-3

  • Manufacturer: Vishay Siliconix
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock168

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SI1307EDL-T1-GE3
SI1307EDL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 0.85A SC-70-3

  • Manufacturer: Vishay Siliconix
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 290mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock479

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SI1308EDL-T1-GE3
SI1308EDL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 1.4A SOT323

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
  • Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
In Stock203,946

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SI1315DL-T1-GE3
SI1315DL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 0.9A SC70-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 112pF @ 4V
  • Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
In Stock158

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SI1317DL-T1-GE3
SI1317DL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.4A SC70

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
  • Power Dissipation (Max): 500mW (Tc)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
In Stock434

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SI1330EDL-T1-E3
SI1330EDL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 240MA SOT323-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 280mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock9,266

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SI1330EDL-T1-GE3
SI1330EDL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 240MA SC-70-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 280mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-3
  • Package / Case: SC-70, SOT-323
In Stock173

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SI1400DL-T1-E3
SI1400DL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 1.6A SC70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 568mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock311

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SI1400DL-T1-GE3
SI1400DL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 1.6A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 568mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock244

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SI1401EDH-T1-GE3
SI1401EDH-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 4A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
  • Vgs (Max): ±10V
  • Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock91,398

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SI1402DH-T1-E3
SI1402DH-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 2.7A SOT363

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 950mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock462

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SI1402DH-T1-GE3
SI1402DH-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 2.7A SOT363

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 950mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock268

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SI1403BDL-T1-E3
SI1403BDL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.4A SC70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 568mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock7,355

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SI1403BDL-T1-GE3
SI1403BDL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.5A SC70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 625mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock15,378

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SI1403CDL-T1-GE3
SI1403CDL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.1A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 1.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V
  • Power Dissipation (Max): 600mW (Ta), 900mW (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock334

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SI1404BDH-T1-E3
SI1404BDH-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 1.9A SOT363

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
  • Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock177

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SI1404BDH-T1-GE3
SI1404BDH-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 1.9A SOT363

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
  • Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock408

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SI1405BDH-T1-E3
SI1405BDH-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 1.6A SOT363

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
  • Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock407

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SI1405BDH-T1-GE3
SI1405BDH-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 1.6A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
  • Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock434

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SI1405DL-T1-E3
SI1405DL-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 1.6A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 568mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock164

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SI1405DL-T1-GE3
SI1405DL-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 1.6A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 568mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock139

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SI1406DH-T1-E3
SI1406DH-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 3.1A SC70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock450

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SI1406DH-T1-GE3
SI1406DH-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 3.1A SC-70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock460

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SI1410EDH-T1-E3
SI1410EDH-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.9A SC70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock346

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SI1411DH-T1-E3
SI1411DH-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 150V 0.42A SC70-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
In Stock474

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