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Transistors

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SI1013R-T1-GE3
SI1013R-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 350MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock49,298

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SI1013X-T1-E3
SI1013X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 350MA SC89-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
In Stock495

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SI1013X-T1-GE3
SI1013X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 350MA SC89-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
In Stock34,692

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SI1021R-T1-E3
SI1021R-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 190MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock421

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SI1021R-T1-GE3
SI1021R-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 190MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock60,326

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SI1022R-T1-E3
SI1022R-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 330MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock287

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SI1022R-T1-GE3
SI1022R-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 330MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock195

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SI1031R-T1-E3
SI1031R-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.14A SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock450

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SI1031R-T1-GE3
SI1031R-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.14A SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock144

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SI1031X-T1-E3
SI1031X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.155A SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock277

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SI1031X-T1-GE3
SI1031X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.155A SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock211

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SI1032R-T1-E3
SI1032R-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 140MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock252

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SI1032R-T1-GE3
SI1032R-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 140MA SC-75A

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock114,060

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SI1032X-T1-E3
SI1032X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 200MA SC89-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
In Stock195

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SI1032X-T1-GE3
SI1032X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 200MA SC89-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Vgs (Max): ±6V
  • Power Dissipation (Max): 300mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
In Stock3,693

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SI1037X-T1-E3
SI1037X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.77A SC89

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 770mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 170mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89 (SOT-563F)
  • Package / Case: SOT-563, SOT-666
In Stock389

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SI1037X-T1-GE3
SI1037X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 0.77A SC89

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 770mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 770mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 170mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89 (SOT-563F)
  • Package / Case: SOT-563, SOT-666
In Stock223

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SI1039X-T1-E3
SI1039X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 0.87A SOT563F

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 870mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 170mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock488

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SI1039X-T1-GE3
SI1039X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 12V 0.87A SC89

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 870mA, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±8V
  • Power Dissipation (Max): 170mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock300

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SI1046R-T1-E3
SI1046R-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.606A SC75-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 606mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock323

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SI1046R-T1-GE3
SI1046R-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.606A SC75-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 606mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75A
  • Package / Case: SC-75A
In Stock402

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SI1046X-T1-GE3
SI1046X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 0.606A SC89-3

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 606mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490
In Stock179

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SI1050X-T1-E3
SI1050X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 8V 1.34A SOT563F

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock380

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SI1050X-T1-GE3
SI1050X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 8V 1.34A SC-89-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock25,469

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SI1051X-T1-E3
SI1051X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 1.2A SC89-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock362

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SI1051X-T1-GE3
SI1051X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 1.2A SC89-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock484

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SI1054X-T1-E3
SI1054X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 1.32A SC89-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock455

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SI1054X-T1-GE3
SI1054X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 12V 1.32A SC89-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock447

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SI1056X-T1-E3
SI1056X-T1-E3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 1.32A SOT563F

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 1.32A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock164

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SI1056X-T1-GE3
SI1056X-T1-GE3

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V SC-89-6

  • Manufacturer: Vishay Siliconix
  • Series: TrenchFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 89mOhm @ 1.32A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
  • Power Dissipation (Max): 236mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
In Stock150

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