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Transistors

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NTHD3133PFT3G
NTHD3133PFT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.2A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock471

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NTHD4N02FT1
NTHD4N02FT1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 910mW (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock284

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NTHD4N02FT1G
NTHD4N02FT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 910mW (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock342

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NTHD4P02FT1G
NTHD4P02FT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 2.2A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock269

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NTHD5904NT1
NTHD5904NT1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.5A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
  • Power Dissipation (Max): 640mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock273

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NTHD5904NT1G
NTHD5904NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.5A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
  • Power Dissipation (Max): 640mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock291

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NTHD5904NT3
NTHD5904NT3

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.5A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
  • Power Dissipation (Max): 640mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock196

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NTHD5904NT3G
NTHD5904NT3G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 2.5A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 16V
  • Power Dissipation (Max): 640mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock403

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NTHL027N65S3HF
NTHL027N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

FET 650V 75A TO247

  • Manufacturer: ON Semiconductor
  • Series: *
In Stock230

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NTHL033N65S3HF
NTHL033N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 650V 70A

  • Manufacturer: ON Semiconductor
  • Series: FRFET®, SuperFET® III
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6720pF @ 400V
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock628

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NTHL040N65S3F
NTHL040N65S3F

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SUPERFET3 650V TO247

  • Manufacturer: ON Semiconductor
  • Series: SuperFET® III
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 158nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5940pF @ 400V
  • Power Dissipation (Max): 446W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock828

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NTHL040N65S3HF
NTHL040N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

FET 650V 65AA TO247

  • Manufacturer: ON Semiconductor
  • Series: *
In Stock720

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NTHL050N65S3HF
NTHL050N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SF3 650V 50MOHM E TO247L

  • Manufacturer: ON Semiconductor
  • Series: FRFET®, SuperFET® III
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 29A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5017pF @ 400V
  • Power Dissipation (Max): 378W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock313

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NTHL065N65S3F
NTHL065N65S3F

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SUPERFET3 650V TO247

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4075pF @ 400V
  • Power Dissipation (Max): 337W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock406

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NTHL080N120SC1
NTHL080N120SC1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SIC MOS TO247 80MW 1200V

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
  • Vgs (Max): +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 800V
  • Power Dissipation (Max): 348W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock757

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NTHL082N65S3F
NTHL082N65S3F

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SUPERFET3 650V TO247

  • Manufacturer: ON Semiconductor
  • Series: SuperFET® III
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 400V
  • Power Dissipation (Max): 313W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock658

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NTHL095N65S3HF
NTHL095N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SUPERFET3 650V FRFET,95MO

  • Manufacturer: ON Semiconductor
  • Series: FRFET®, SuperFET® III
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 860µA
  • Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 400V
  • Power Dissipation (Max): 272W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock178

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NTHL110N65S3F
NTHL110N65S3F

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SUPERFET3 650V TO247 PKG

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 400V
  • Power Dissipation (Max): 240W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock651

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NTHL190N65S3HF
NTHL190N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

SUPERFET3 650V FRFET,190M

  • Manufacturer: ON Semiconductor
  • Series: FRFET®, SuperFET® III
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 400V
  • Power Dissipation (Max): 162W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
In Stock677

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NTHLD040N65S3HF
NTHLD040N65S3HF

ON Semiconductor

Transistors - FETs, MOSFETs - Single

FET 650V 65A TO247AD

  • Manufacturer: ON Semiconductor
  • Series: *
In Stock157

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NTHS2101PT1
NTHS2101PT1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 5.4A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 6.4V
  • Power Dissipation (Max): 1.3W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock234

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NTHS2101PT1G
NTHS2101PT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 8V 5.4A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 6.4V
  • Power Dissipation (Max): 1.3W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock198

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NTHS4101PT1G
NTHS4101PT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.8A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 16V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock24,843

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NTHS4111PT1G
NTHS4111PT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.3A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 24V
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock488

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NTHS4166NT1G
NTHS4166NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
  • Power Dissipation (Max): 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock254

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NTHS4501NT1
NTHS4501NT1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 24V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock456

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NTHS4501NT1G
NTHS4501NT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 24V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock106

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NTHS5402T1
NTHS5402T1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 4.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock323

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NTHS5404T1G
NTHS5404T1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5.2A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Vgs (Max): ±12V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock173

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NTHS5441PT1G
NTHS5441PT1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.9A CHIPFET

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 5V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
In Stock308

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