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| Part Number | NTHL080N120SC1 |
| OEMstron Part # | NTHL080N120SC1 |
| Manufacturer | ON Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | SIC MOS TO247 80MW 1200V |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | NTHL080N120SC1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 18 - May 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
NTHL080N120SC1 Specifications
| Part Number | NTHL080N120SC1 | |
| Brand | ON Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 20V | |
| Vgs(th) (Max) @ Id | 4.3V @ 5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 20V | |
| Vgs (Max) | +25V, -15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1670pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 348W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
NTHL080N120SC1 Documents
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