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Records 64,903

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Part Number	Description	In Stock
NTD32N06LG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 32A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock261 More on Order
NTD32N06LT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 32A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 28mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock210 More on Order
NTD32N06T4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 32A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 26mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Power Dissipation (Max): 1.5W (Ta), 93.75W (Tj) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock153 More on Order
NTD3808N-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 12A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock243 More on Order
NTD3808N-35G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 12A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock405 More on Order
NTD3808NT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 12A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 12V Power Dissipation (Max): 1.3W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock494 More on Order
NTD3813N-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 9.6A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock238 More on Order
NTD3813N-35G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 9.6A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock434 More on Order
NTD3813NT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 9.6A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 963pF @ 12V Power Dissipation (Max): 1.2W (Ta), 34.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock418 More on Order
NTD3817N-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 7.6A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock440 More on Order
NTD3817N-35G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 7.6A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock144 More on Order
NTD3817NT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16V 7.6A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 12V Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock123 More on Order
NTD40N03R-001 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 45A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock166 More on Order
NTD40N03R-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock435 More on Order
NTD40N03RG ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock390 More on Order
NTD40N03RT4 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock261 More on Order
NTD40N03RT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 7.8A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock439 More on Order
NTD4302 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock313 More on Order
NTD4302-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock109 More on Order
NTD4302G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock337 More on Order
NTD4302T4 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock278 More on Order
NTD4302T4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 8.4A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V Power Dissipation (Max): 1.04W (Ta), 75W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock308 More on Order
NTD4804N-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.5A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock136 More on Order
NTD4804N-35G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.5A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock218 More on Order
NTD4804NA-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.5A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock240 More on Order
NTD4804NA-35G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.5A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock282 More on Order
NTD4804NAT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.5A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock230 More on Order
NTD4804NT4G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14.5A DPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4490pF @ 12V Power Dissipation (Max): 1.43W (Ta), 107W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock390 More on Order
NTD4805N-1G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.6A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock185 More on Order
NTD4805N-35G ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 12.6A IPAK Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 11.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 12V Power Dissipation (Max): 1.41W (Ta), 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	In Stock440 More on Order

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