Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

Transistors

Records 64,903
Page 1586/2164
Image
Part Number
Description
In Stock
Quantity
NTD20N06LT4
NTD20N06LT4

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock295

More on Order

NTD20N06LT4G
NTD20N06LT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 60W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock3,562

More on Order

NTD20N06T4
NTD20N06T4

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
  • Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock470

More on Order

NTD20N06T4G
NTD20N06T4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 20A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
  • Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock4,161

More on Order

NTD20P06L-001
NTD20P06L-001

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 15.5A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Power Dissipation (Max): 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock264

More on Order

NTD20P06L-1G
NTD20P06L-1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 15.5A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Power Dissipation (Max): 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock302

More on Order

NTD20P06LG
NTD20P06LG

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 15.5A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Power Dissipation (Max): 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock463

More on Order

NTD20P06LT4G
NTD20P06LT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 15.5A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Power Dissipation (Max): 65W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock362

More on Order

NTD23N03R
NTD23N03R

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 3.8A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
  • Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock381

More on Order

NTD23N03R-001
NTD23N03R-001

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 3.8A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
  • Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock336

More on Order

NTD23N03R-1G
NTD23N03R-1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 3.8A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
  • Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock138

More on Order

NTD23N03RG
NTD23N03RG

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 3.8A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
  • Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock198

More on Order

NTD23N03RT4
NTD23N03RT4

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 3.8A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
  • Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock341

More on Order

NTD23N03RT4G
NTD23N03RT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 3.8A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 17.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.76nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 20V
  • Power Dissipation (Max): 1.14W (Ta), 22.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock295

More on Order

NTD24N06-001
NTD24N06-001

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock469

More on Order

NTD24N06-1G
NTD24N06-1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock355

More on Order

NTD24N06G
NTD24N06G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock463

More on Order

NTD24N06L
NTD24N06L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock344

More on Order

NTD24N06L-001
NTD24N06L-001

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock183

More on Order

NTD24N06L-1G
NTD24N06L-1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock272

More on Order

NTD24N06LG
NTD24N06LG

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock230

More on Order

NTD24N06LT4G
NTD24N06LT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock213

More on Order

NTD24N06T4G
NTD24N06T4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 24A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Power Dissipation (Max): 1.36W (Ta), 62.5W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock186

More on Order

NTD25P03L1
NTD25P03L1

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 25A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Power Dissipation (Max): 75W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock487

More on Order

NTD25P03L1G
NTD25P03L1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 25A IPAK3

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Power Dissipation (Max): 75W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock112

More on Order

NTD25P03LG
NTD25P03LG

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 25A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Power Dissipation (Max): 75W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock116

More on Order

NTD25P03LRLG
NTD25P03LRLG

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 25A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Power Dissipation (Max): 75W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock319

More on Order

NTD25P03LT4
NTD25P03LT4

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 25A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Power Dissipation (Max): 75W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock230

More on Order

NTD25P03LT4G
NTD25P03LT4G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 25A DPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 25V
  • Power Dissipation (Max): 75W (Tj)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock15,478

More on Order

NTD2955-1G
NTD2955-1G

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 60V 12A IPAK

  • Manufacturer: ON Semiconductor
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
  • Power Dissipation (Max): 55W (Tj)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock2,434

More on Order