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Part Number	Description	In Stock
IRFS9N60ATRR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.2A D2PAK Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock243 More on Order
IRFS9N60ATRRPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.2A D2PAK Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,263 More on Order
IRFSL11N50A Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 11A TO-262 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1426pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock377 More on Order
IRFSL11N50APBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 11A TO-262 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1426pF @ 25V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,744 More on Order
IRFSL17N20D Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock431 More on Order
IRFSL17N20DPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 16A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 170mOhm @ 9.8A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock393 More on Order
IRFSL23N15D Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 23A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock384 More on Order
IRFSL23N15DPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 23A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock211 More on Order
IRFSL23N20D Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 24A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock413 More on Order
IRFSL23N20D102P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 24A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock478 More on Order
IRFSL3004PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 195A TO262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock311 More on Order
IRFSL3006PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 195A TO262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock5,658 More on Order
IRFSL3107PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 195A TO262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock267 More on Order
IRFSL31N20D Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 31A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock446 More on Order
IRFSL31N20DTRL Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 31A TO-262 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock347 More on Order
IRFSL31N20DTRR Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 31A TO-262 Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 82mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock131 More on Order
IRFSL3206PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock146 More on Order
IRFSL3207 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 180A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 50V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock139 More on Order
IRFSL3207ZPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock665 More on Order
IRFSL3306PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 120A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock429 More on Order
IRFSL3307 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock271 More on Order
IRFSL3307ZPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 120A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 50V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock493 More on Order
IRFSL33N15D Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 33A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock329 More on Order
IRFSL33N15DTRRP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 33A TO-262-3 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock481 More on Order
IRFSL3507 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 97A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 50V Power Dissipation (Max): 190W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock140 More on Order
IRFSL3607PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 80A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,742 More on Order
IRFSL3806PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 43A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock14,726 More on Order
IRFSL38N20DPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 43A TO-262-3 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock184 More on Order
IRFSL4010PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A TO-262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock4,508 More on Order
IRFSL4020PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 18A TO262 Manufacturer: Infineon Technologies FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock378 More on Order

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