Transistors | OEMstron

Part Number	Description	In Stock
IRFS7440TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 40V 120A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock1,335 More on Order
IRFS750A ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 8.4A TO-220F Manufacturer: ON Semiconductor FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V Power Dissipation (Max): 49W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock286 More on Order
IRFS7530-7PPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 240A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock348 More on Order
IRFS7530PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 195A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock334 More on Order
IRFS7530TRL7PP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 240A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock435 More on Order
IRFS7530TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 195A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock1,264 More on Order
IRFS7534-7PPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 240A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock267 More on Order
IRFS7534PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 195A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V Power Dissipation (Max): 294W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock237 More on Order
IRFS7534TRL7PP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 240A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock1,743 More on Order
IRFS7534TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 195A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V Power Dissipation (Max): 294W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock383 More on Order
IRFS7537PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 173A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock120 More on Order
IRFS7537TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 173A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock105 More on Order
IRFS7540PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 110A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock136 More on Order
IRFS7540TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 60V 110A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V Power Dissipation (Max): 160W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock173 More on Order
IRFS7730-7PPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 240A D2PAK Manufacturer: Infineon Technologies Series: StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock110 More on Order
IRFS7730PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 195A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock614 More on Order
IRFS7730TRL7PP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 240A D2PAK Manufacturer: Infineon Technologies Series: StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock349 More on Order
IRFS7730TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 195A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock1,750 More on Order
IRFS7734-7PPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 183A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V Power Dissipation (Max): 294W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock406 More on Order
IRFS7734PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 183A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock303 More on Order
IRFS7734TRL7PP Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 183A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V Power Dissipation (Max): 294W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock1,758 More on Order
IRFS7734TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 183A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 183A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V Power Dissipation (Max): 290W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock150 More on Order
IRFS7762PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 104A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock438 More on Order
IRFS7762TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 104A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock398 More on Order
IRFS7787PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 76A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock116 More on Order
IRFS7787TRLPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 76A D2PAK Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263AB) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock356 More on Order
IRFS9N60A Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.2A D2PAK Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock465 More on Order
IRFS9N60APBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.2A D2PAK Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,038 More on Order
IRFS9N60ATRL Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.2A D2PAK Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock232 More on Order
IRFS9N60ATRLPBF Vishay Siliconix	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9.2A D2PAK Manufacturer: Vishay Siliconix FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power Dissipation (Max): 170W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock414 More on Order

IRFS7440TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 40V 120A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
Power Dissipation (Max): 208W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock1,335

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IRFS750A

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 8.4A TO-220F

Manufacturer: ON Semiconductor
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
Power Dissipation (Max): 49W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

In Stock286

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IRFS7530-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock348

More on Order

IRFS7530PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock334

More on Order

IRFS7530TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock435

More on Order

IRFS7530TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock1,264

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IRFS7534-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock267

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IRFS7534PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
Power Dissipation (Max): 294W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock237

More on Order

IRFS7534TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock1,743

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IRFS7534TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
Power Dissipation (Max): 294W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock383

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IRFS7537PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 173A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock120

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IRFS7537TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 173A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock105

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IRFS7540PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 110A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock136

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IRFS7540TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 110A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
Power Dissipation (Max): 160W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock173

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IRFS7730-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 240A D2PAK

Manufacturer: Infineon Technologies
Series: StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

In Stock110

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IRFS7730PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 195A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock614

More on Order

IRFS7730TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 240A D2PAK

Manufacturer: Infineon Technologies
Series: StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock349

More on Order

IRFS7730TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 195A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock1,750

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IRFS7734-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
Power Dissipation (Max): 294W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

In Stock406

More on Order

IRFS7734PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock303

More on Order

IRFS7734TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
Power Dissipation (Max): 294W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK (7-Lead)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)

In Stock1,758

More on Order

IRFS7734TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock150

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IRFS7762PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 104A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
Power Dissipation (Max): 140W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock438

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IRFS7762TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 104A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
Power Dissipation (Max): 140W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock398

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IRFS7787PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 76A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock116

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IRFS7787TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 76A D2PAK

Manufacturer: Infineon Technologies
Series: HEXFET®, StrongIRFET™
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263AB)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock356

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IRFS9N60A

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

Manufacturer: Vishay Siliconix
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock465

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IRFS9N60APBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

Manufacturer: Vishay Siliconix
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock2,038

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IRFS9N60ATRL

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

Manufacturer: Vishay Siliconix
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock232

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IRFS9N60ATRLPBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

Manufacturer: Vishay Siliconix
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

In Stock414

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