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Transistors

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IRFS7440TRLPBF
IRFS7440TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 40V 120A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
  • Power Dissipation (Max): 208W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,335

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IRFS750A
IRFS750A

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 400V 8.4A TO-220F

  • Manufacturer: ON Semiconductor
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
  • Power Dissipation (Max): 49W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
In Stock286

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IRFS7530-7PPBF
IRFS7530-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock348

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IRFS7530PBF
IRFS7530PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock334

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IRFS7530TRL7PP
IRFS7530TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 354nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 12960pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock435

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IRFS7530TRLPBF
IRFS7530TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 411nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13703pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,264

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IRFS7534-7PPBF
IRFS7534-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V
  • Power Dissipation (Max): 290W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock267

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IRFS7534PBF
IRFS7534PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
  • Power Dissipation (Max): 294W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock237

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IRFS7534TRL7PP
IRFS7534TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 240A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9990pF @ 25V
  • Power Dissipation (Max): 290W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock1,743

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IRFS7534TRLPBF
IRFS7534TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 195A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 279nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10034pF @ 25V
  • Power Dissipation (Max): 294W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock383

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IRFS7537PBF
IRFS7537PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 173A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
  • Power Dissipation (Max): 230W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock120

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IRFS7537TRLPBF
IRFS7537TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 173A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V
  • Power Dissipation (Max): 230W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock105

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IRFS7540PBF
IRFS7540PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 110A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock136

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IRFS7540TRLPBF
IRFS7540TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 60V 110A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4555pF @ 25V
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock173

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IRFS7730-7PPBF
IRFS7730-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 240A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock110

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IRFS7730PBF
IRFS7730PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 195A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock614

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IRFS7730TRL7PP
IRFS7730TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 240A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 428nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13970pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock349

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IRFS7730TRLPBF
IRFS7730TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 195A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock1,750

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IRFS7734-7PPBF
IRFS7734-7PPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
  • Power Dissipation (Max): 294W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
In Stock406

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IRFS7734PBF
IRFS7734PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
  • Power Dissipation (Max): 290W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock303

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IRFS7734TRL7PP
IRFS7734TRL7PP

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 197A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.05mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10130pF @ 25V
  • Power Dissipation (Max): 294W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (7-Lead)
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock1,758

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IRFS7734TRLPBF
IRFS7734TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 183A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10150pF @ 25V
  • Power Dissipation (Max): 290W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock150

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IRFS7762PBF
IRFS7762PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 104A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock438

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IRFS7762TRLPBF
IRFS7762TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 104A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 51A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock398

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IRFS7787PBF
IRFS7787PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 76A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock116

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IRFS7787TRLPBF
IRFS7787TRLPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 76A D2PAK

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®, StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock356

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IRFS9N60A
IRFS9N60A

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock465

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IRFS9N60APBF
IRFS9N60APBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock2,038

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IRFS9N60ATRL
IRFS9N60ATRL

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock232

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IRFS9N60ATRLPBF
IRFS9N60ATRLPBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 9.2A D2PAK

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock414

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