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Transistors

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IRFHP8334TRPBF
IRFHP8334TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET 30V 25A POWER 8-SO

  • Manufacturer: Infineon Technologies
In Stock470

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IRFHS8242TR2PBF
IRFHS8242TR2PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 9.9A PQFN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
  • Power Dissipation (Max): 2.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
In Stock365

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IRFHS8242TRPBF
IRFHS8242TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 9.9A PQFN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
  • Power Dissipation (Max): 2.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
In Stock180

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IRFHS8342TR2PBF
IRFHS8342TR2PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.8A PQFN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Power Dissipation (Max): 2.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-6
  • Package / Case: 6-PowerVDFN
In Stock118

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IRFHS8342TRPBF
IRFHS8342TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 8.8A PQFN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Power Dissipation (Max): 2.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-6
  • Package / Case: 6-PowerVDFN
In Stock4,975

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IRFHS9301TR2PBF
IRFHS9301TR2PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 6A PQFN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
  • Power Dissipation (Max): 2.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
In Stock417

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IRFHS9301TRPBF
IRFHS9301TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 6A PQFN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 7.8A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 25V
  • Power Dissipation (Max): 2.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-PowerVDFN
In Stock5,758

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IRFI1010NPBF
IRFI1010NPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 49A TO220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Power Dissipation (Max): 58W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock2,766

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IRFI1310N
IRFI1310N

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 24A TO220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Power Dissipation (Max): 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock202

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IRFI1310NPBF
IRFI1310NPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 24A TO220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Power Dissipation (Max): 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock3,299

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IRFI2807
IRFI2807

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 40A TO220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
  • Power Dissipation (Max): 48W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock136

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IRFI3205PBF
IRFI3205PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 55V 64A TO220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 34A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
  • Power Dissipation (Max): 63W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock2,622

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IRFI3306GPBF
IRFI3306GPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 71A TO220

  • Manufacturer: Infineon Technologies
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.2mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4685pF @ 50V
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3 Full Pack
In Stock491

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IRFI4110GPBF
IRFI4110GPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 72A TO220AB

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9540pF @ 50V
  • Power Dissipation (Max): 61W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock18,150

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IRFI4121H-117P
IRFI4121H-117P

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 11A TO220-5

  • Manufacturer: Infineon Technologies
In Stock244

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IRFI4227PBF
IRFI4227PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 26A TO-220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock5,594

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IRFI4228PBF
IRFI4228PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 34A TO-220AB FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock3,081

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IRFI4229PBF
IRFI4229PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 19A TO-220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4480pF @ 25V
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
In Stock3,656

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IRFI4321PBF
IRFI4321PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 34A TO-220AB FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 50V
  • Power Dissipation (Max): 46W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock15,140

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IRFI4410ZGPBF
IRFI4410ZGPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 43A TO220AB

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
  • Power Dissipation (Max): 47W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock124

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IRFI4410ZPBF
IRFI4410ZPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 43A TO-220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.3mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
  • Power Dissipation (Max): 47W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock1,628

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IRFI4510GPBF
IRFI4510GPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N CH 100V 35A TO220

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13.5mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2998pF @ 50V
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock1,083

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IRFI4905
IRFI4905

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 55V 41A TO-220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
  • Power Dissipation (Max): 63W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock151

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IRFI510G
IRFI510G

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 4.5A TO220FP

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock129

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IRFI510GPBF
IRFI510GPBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 4.5A TO220FP

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 2.7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • Power Dissipation (Max): 27W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock1,441

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IRFI520G
IRFI520G

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 7.2A TO220FP

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Power Dissipation (Max): 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock196

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IRFI520GPBF
IRFI520GPBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 7.2A TO220FP

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Power Dissipation (Max): 37W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock798

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IRFI520N
IRFI520N

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 7.6A TO220FP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Power Dissipation (Max): 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
In Stock332

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IRFI530G
IRFI530G

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 9.7A TO220FP

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock447

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IRFI530GPBF
IRFI530GPBF

Vishay Siliconix

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 9.7A TO220FP

  • Manufacturer: Vishay Siliconix
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
In Stock1,305

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