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Part Number	Description	In Stock
IRFH5303TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 82A 5X6 PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 15V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock431 More on Order
IRFH5303TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 82A 8-PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 49A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 15V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock322 More on Order
IRFH5304TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8VQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock475 More on Order
IRFH5304TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8VQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 47A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock10,753 More on Order
IRFH5306TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 5X6 PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 15V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	In Stock471 More on Order
IRFH5306TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 15A 5X6 PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1125pF @ 15V Power Dissipation (Max): 3.6W (Ta), 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	In Stock468 More on Order
IRFH5406TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A 5X6 PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 25V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock444 More on Order
IRFH5406TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A 8-PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 25V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock177 More on Order
IRFH6200TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A 5X6 PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 1.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock465 More on Order
IRFH6200TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 49A 8-PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 1.1V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock152 More on Order
IRFH7004TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 40V 100A PQFN5X6 Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6419pF @ 25V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	In Stock199 More on Order
IRFH7004TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 40V 100A PQFN 5X6 Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 194nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6419pF @ 25V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	In Stock15,326 More on Order
IRFH7084TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 25V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock5,665 More on Order
IRFH7085TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 23A 6-PQFN Manufacturer: Infineon Technologies Series: StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V Power Dissipation (Max): 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock12,918 More on Order
IRFH7107TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 14A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 25V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock315 More on Order
IRFH7107TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 14A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 25V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock315 More on Order
IRFH7110TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 11A PQFN5X6 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	In Stock337 More on Order
IRFH7110TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 11A PQFN 5X6 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 25V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	In Stock406 More on Order
IRFH7182TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 100V 23A PQFN Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 50V Power Dissipation (Max): 4W (Ta), 195W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock237 More on Order
IRFH7184ATRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8-TDSON Manufacturer: Infineon Technologies Series: *	In Stock330 More on Order
IRFH7184TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 20A Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.6V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 50V Power Dissipation (Max): 3.9W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock480 More on Order
IRFH7185TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 100V 19A 8QFN Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.6V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 50V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock418 More on Order
IRFH7187TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18A Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.6V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 50V Power Dissipation (Max): 3.8W (Ta), 132W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	In Stock344 More on Order
IRFH7188TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 18A Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2116pF @ 50V Power Dissipation (Max): 3.8W (Ta), 132W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock104 More on Order
IRFH7190ATRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8-TDSON Manufacturer: Infineon Technologies Series: *	In Stock272 More on Order
IRFH7190TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 49A, 10V Vgs(th) (Max) @ Id: 3.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 50V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock404 More on Order
IRFH7191TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 15A Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 48A, 10V Vgs(th) (Max) @ Id: 3.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1685pF @ 50V Power Dissipation (Max): 3.6W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock197 More on Order
IRFH7194TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 11A Manufacturer: Infineon Technologies Series: FASTIRFET™, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16.4mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 3.6V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 50V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock363 More on Order
IRFH7440TR2PBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 85A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4574pF @ 25V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock239 More on Order
IRFH7440TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 85A 8PQFN Manufacturer: Infineon Technologies Series: HEXFET®, StrongIRFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4574pF @ 25V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	In Stock45,868 More on Order

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