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Transistors

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IRF7524D1TR
IRF7524D1TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.7A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock188

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IRF7524D1TRPBF
IRF7524D1TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.7A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock423

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IRF7526D1
IRF7526D1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock437

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IRF7526D1PBF
IRF7526D1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock327

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IRF7526D1TR
IRF7526D1TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock404

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IRF7526D1TRPBF
IRF7526D1TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock265

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IRF7534D1
IRF7534D1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.3A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock190

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IRF7534D1PBF
IRF7534D1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.3A MICRO-8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock412

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IRF7534D1TR
IRF7534D1TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 4.3A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: FETKY™
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock249

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IRF7580MTRPBF
IRF7580MTRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 114A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: StrongIRFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 70A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 25V
  • Power Dissipation (Max): 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DirectFET™ Isometric ME
  • Package / Case: DirectFET™ Isometric ME
In Stock140

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IRF7601PBF
IRF7601PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5.7A MICRO-8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock166

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IRF7601TR
IRF7601TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5.7A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock440

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IRF7601TRPBF
IRF7601TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 5.7A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock5,648

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IRF7603TR
IRF7603TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.6A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock315

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IRF7603TRPBF
IRF7603TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5.6A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock500

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IRF7604TR
IRF7604TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.6A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock203

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IRF7604TRPBF
IRF7604TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 3.6A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock198

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IRF7606TR
IRF7606TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.6A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock106

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IRF7606TRPBF
IRF7606TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 30V 3.6A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock5,208

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IRF7607
IRF7607

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 6.5A MICRO-8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock388

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IRF7607TRPBF
IRF7607TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 6.5A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 15V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock5,272

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IRF7663
IRF7663

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 10V
  • Power Dissipation (Max): 1.8W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock225

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IRF7663TR
IRF7663TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 10V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock481

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IRF7663TRPBF
IRF7663TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.2A MICRO8

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 10V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro8™
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
In Stock339

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IRF7665S2TR1PBF
IRF7665S2TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 4.1A DFET SB

  • Manufacturer: Infineon Technologies
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
  • Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET SB
  • Package / Case: DirectFET™ Isometric SB
In Stock281

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IRF7665S2TRPBF
IRF7665S2TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V DIRECTFET SB

  • Manufacturer: Infineon Technologies
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 25V
  • Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET SB
  • Package / Case: DirectFET™ Isometric SB
In Stock447

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IRF7700
IRF7700

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.6A 8-TSSOP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Power Dissipation (Max): 1.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
In Stock304

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IRF7700GTRPBF
IRF7700GTRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.6A 8-TSSOP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Power Dissipation (Max): 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
In Stock161

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IRF7700TR
IRF7700TR

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.6A 8-TSSOP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Power Dissipation (Max): 1.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
In Stock111

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IRF7700TRPBF
IRF7700TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 8.6A 8-TSSOP

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 8.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
  • Power Dissipation (Max): 1.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSSOP
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
In Stock407

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