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| Part Number | IRF7663TR |
| OEMstron Part # | IRF7663TR |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH 20V 8.2A MICRO8 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IRF7663TR PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 6 - May 11 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IRF7663TR Specifications
| Part Number | IRF7663TR | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2520pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | Micro8™ | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
IRF7663TR Documents
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| In Stock | 481 - More on Order |
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