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Transistors

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IRF6636
IRF6636

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 18A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock260

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IRF6636TR1
IRF6636TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 18A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock400

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IRF6636TR1PBF
IRF6636TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 18A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock499

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IRF6636TRPBF
IRF6636TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 18A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock6,405

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IRF6637TR1
IRF6637TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
  • Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MP
  • Package / Case: DirectFET™ Isometric MP
In Stock393

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IRF6637TR1PBF
IRF6637TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
  • Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MP
  • Package / Case: DirectFET™ Isometric MP
In Stock451

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IRF6637TRPBF
IRF6637TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
  • Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MP
  • Package / Case: DirectFET™ Isometric MP
In Stock356

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IRF6638TR1PBF
IRF6638TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 25A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock298

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IRF6638TRPBF
IRF6638TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 25A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock404

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IRF6641TR1PBF
IRF6641TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 4.6A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MZ
  • Package / Case: DirectFET™ Isometric MZ
In Stock482

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IRF6641TRPBF
IRF6641TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 4.6A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 59.9mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MZ
  • Package / Case: DirectFET™ Isometric MZ
In Stock314

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IRF6643TR1PBF
IRF6643TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 6.2A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MZ
  • Package / Case: DirectFET™ Isometric MZ
In Stock266

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IRF6643TRPBF
IRF6643TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 6.2A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MZ
  • Package / Case: DirectFET™ Isometric MZ
In Stock5,626

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IRF6644
IRF6644

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V DIRECTFET-MN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock225

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IRF6644TR1
IRF6644TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V DIRECTFET-MN

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock288

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IRF6644TR1PBF
IRF6644TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 10.3A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock362

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IRF6644TRPBF
IRF6644TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 10.3A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 10.3A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock6,552

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IRF6645
IRF6645

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V DIRECTFET-SJ

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Power Dissipation (Max): 3W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ SJ
  • Package / Case: DirectFET™ Isometric SJ
In Stock358

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IRF6645TR1PBF
IRF6645TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 5.7A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ SJ
  • Package / Case: DirectFET™ Isometric SJ
In Stock296

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IRF6645TRPBF
IRF6645TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 5.7A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5.7A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 25V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ SJ
  • Package / Case: DirectFET™ Isometric SJ
In Stock28,350

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IRF6646TR1
IRF6646TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 12A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock281

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IRF6646TR1PBF
IRF6646TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 12A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock433

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IRF6646TRPBF
IRF6646TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 12A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock211

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IRF6648TR1
IRF6648TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 86A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock291

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IRF6648TR1PBF
IRF6648TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 86A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock446

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IRF6648TRPBF
IRF6648TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 86A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MN
  • Package / Case: DirectFET™ Isometric MN
In Stock14,390

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IRF6655TR1
IRF6655TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V DIRECTFET-SH

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ SH
  • Package / Case: DirectFET™ Isometric SH
In Stock282

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IRF6655TR1PBF
IRF6655TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 4.2A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ SH
  • Package / Case: DirectFET™ Isometric SH
In Stock278

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IRF6655TRPBF
IRF6655TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 4.2A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4.8V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ SH
  • Package / Case: DirectFET™ Isometric SH
In Stock21,890

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IRF6662TR1PBF
IRF6662TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 8.3A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MZ
  • Package / Case: DirectFET™ Isometric MZ
In Stock157

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