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Transistors

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IRF6611
IRF6611

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 32A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
  • Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock221

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IRF6611TR1
IRF6611TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 32A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
  • Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock408

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IRF6611TR1PBF
IRF6611TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 32A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
  • Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock413

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IRF6611TRPBF
IRF6611TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 32A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4860pF @ 15V
  • Power Dissipation (Max): 3.9W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock218

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IRF6612TR1
IRF6612TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 24A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock419

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IRF6612TR1PBF
IRF6612TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 24A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock476

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IRF6612TRPBF
IRF6612TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 24A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 136A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock199

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IRF6613TR1
IRF6613TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 23A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock160

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IRF6613TR1PBF
IRF6613TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 23A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock198

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IRF6613TRPBF
IRF6613TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 23A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock6,025

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IRF6614
IRF6614

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V DIRECTFET-ST

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock498

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IRF6614TR1
IRF6614TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V DIRECTFET-ST

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock281

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IRF6614TR1PBF
IRF6614TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 12.7A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock452

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IRF6614TRPBF
IRF6614TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 12.7A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 20V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock48,383

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IRF6616
IRF6616

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 19A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock335

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IRF6616TR1
IRF6616TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 19A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock410

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IRF6616TR1PBF
IRF6616TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 19A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock259

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IRF6616TRPBF
IRF6616TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 19A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3765pF @ 20V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock38,154

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IRF6617TR1
IRF6617TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock100

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IRF6617TR1PBF
IRF6617TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock188

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IRF6617TRPBF
IRF6617TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ ST
  • Package / Case: DirectFET™ Isometric ST
In Stock423

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IRF6618
IRF6618

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock240

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IRF6618TR1
IRF6618TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock361

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IRF6618TR1PBF
IRF6618TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock147

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IRF6618TRPBF
IRF6618TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5640pF @ 15V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MT
  • Package / Case: DirectFET™ Isometric MT
In Stock123

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IRF6619
IRF6619

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock16,790

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IRF6619TR1
IRF6619TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock8,398

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IRF6619TR1PBF
IRF6619TR1PBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock3,096

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IRF6619TRPBF
IRF6619TRPBF

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 30A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock195

More on Order
IRF6620TR1
IRF6620TR1

Infineon Technologies

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 27A DIRECTFET

  • Manufacturer: Infineon Technologies
  • Series: HEXFET®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4130pF @ 10V
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET™ MX
  • Package / Case: DirectFET™ Isometric MX
In Stock417

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