Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Bipolar (BJT) - RF (1,506)
Bipolar (BJT) - Single (13,715)
Bipolar (BJT) - Single, Pre-Biased (3,282)
FETs, MOSFETs - Arrays (3,829)
FETs, MOSFETs - RF (3,043)
FETs, MOSFETs - Single (29,970)
IGBTs - Arrays (18)
IGBTs - Modules (2,367)
IGBTs - Single (3,305)
JFETs (664)
Programmable Unijunction (26)
Special Purpose (162)

Records 64,903

Page 1310/2164

Part Number	Description	In Stock
IPL60R385CPAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 9A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock329 More on Order
IPL60R650P6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8THINPAK Manufacturer: Infineon Technologies Series: CoolMOS™ P6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-ThinPak (5x6) Package / Case: 8-PowerTDFN	In Stock7,450 More on Order
IPL65R070C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 100V Power Dissipation (Max): 169W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock104 More on Order
IPL65R099C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V Power Dissipation (Max): 128W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock127 More on Order
IPL65R130C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V Power Dissipation (Max): 102W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock4,946 More on Order
IPL65R165CFDAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Power Dissipation (Max): 195W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock372 More on Order
IPL65R165CFDAUMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V Power Dissipation (Max): 195W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock262 More on Order
IPL65R190E6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ E6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock477 More on Order
IPL65R195C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V Power Dissipation (Max): 75W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock404 More on Order
IPL65R1K0C6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8TSON Manufacturer: Infineon Technologies Series: CoolMOS™ C6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Power Dissipation (Max): 34.7W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-PAK (5x6) Package / Case: 8-PowerTDFN	In Stock211 More on Order
IPL65R1K5C6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8TSON Manufacturer: Infineon Technologies Series: CoolMOS™ C6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V Power Dissipation (Max): 26.6W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-PAK (5x6) Package / Case: 8-PowerTDFN	In Stock341 More on Order
IPL65R210CFDAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock128 More on Order
IPL65R210CFDAUMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single LOW POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V Power Dissipation (Max): 151W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock405 More on Order
IPL65R230C7AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 4V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 996pF @ 400V Power Dissipation (Max): 67W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock394 More on Order
IPL65R310E6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ E6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V Power Dissipation (Max): 104W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	In Stock490 More on Order
IPL65R340CFDAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 104.2W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	In Stock123 More on Order
IPL65R340CFDAUMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single LOW POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Power Dissipation (Max): 104.2W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	In Stock132 More on Order
IPL65R420E6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ E6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Power Dissipation (Max): 83W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	In Stock232 More on Order
IPL65R460CFDAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V Power Dissipation (Max): 83.3W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	In Stock204 More on Order
IPL65R650C6SATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8TSON Manufacturer: Infineon Technologies Series: CoolMOS™ C6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-PAK (5x6) Package / Case: 8-PowerTDFN	In Stock380 More on Order
IPL65R660E6AUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ E6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V Power Dissipation (Max): 63W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	In Stock289 More on Order
IPL65R725CFDAUMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 4VSON Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 725mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 615pF @ 100V Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	In Stock233 More on Order
IPL70R2K1CESATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V 8TSON Manufacturer: Infineon Technologies Series: *	In Stock388 More on Order
IPLU250N04S41R7XTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8HSOF Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Power Dissipation (Max): 188W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock163 More on Order
IPLU300N04S41R1XTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8HSOF Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 12090pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock3,276 More on Order
IPLU300N04S4R7XTMA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8HSOF Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 287nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 22945pF @ 25V Power Dissipation (Max): 429W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock330 More on Order
IPLU300N04S4R8XTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 300A 8HSOF Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 0.77mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 287nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 22945pF @ 25V Power Dissipation (Max): 429W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock14,769 More on Order
IPN50R1K4CEATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 178pF @ 100V Power Dissipation (Max): 5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	In Stock314 More on Order
IPN50R2K0CEATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V Power Dissipation (Max): 5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	In Stock299 More on Order
IPN50R3K0CEATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single CONSUMER Manufacturer: Infineon Technologies Series: CoolMOS™ CE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 84pF @ 100V Power Dissipation (Max): 5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: SOT-223-3	In Stock446 More on Order

«
‹
1
...
1307
1308
1309
1310 (current)
1311
1312
1313
...
2164
›
»