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IPL65R660E6AUMA1

IPL65R660E6AUMA1
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Part Number IPL65R660E6AUMA1
OEMstron Part # IPL65R660E6AUMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 4VSON
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPL65R660E6AUMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPL65R660E6AUMA1 Specifications

Part Number IPL65R660E6AUMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ E6
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Thin-Pak (8x8)
Package / Case 4-PowerTSFN

IPL65R660E6AUMA1 Documents

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Part Number Description Stock

IPL65R660E6AUMA1

D# IPL65R660E6AUMA1-ND

Infineon Technologies AG

MOSFET N-CH 650V 7A THIN-PAK

Limited Supply - Call
Part Number Description Stock

IPL65R660E6

D# 726-IPL65R660E6

Infineon Technologies AG

MOSFET LOW POWER PRICE/PERFORM

RoHS: Compliant
2685

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