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For Reference Only
| Part Number | GA20SICP12-247 |
| OEMstron Part # | GA20SICP12-247 |
| Manufacturer | GeneSiC Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | TRANS SJT 1200V 45A TO247 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | GA20SICP12-247 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
GA20SICP12-247 Specifications
| Part Number | GA20SICP12-247 | |
| Brand | GeneSiC Semiconductor | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| FET Type | - | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 3091pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 282W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AB | |
| Package / Case | TO-247-3 |
GA20SICP12-247 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
GA20SICP12-263 GeneSic Semiconductor Inc |
SIC CO-PACK SJT/RECT 20A 1.2KV |
Contact Us |
| Part Number | Description | Stock |
|
GA20SICP12-263 D# 1242-1194-ND GeneSic Semiconductor Inc |
SIC CO-PACK SJT/RECT 20A 1.2KV |
40 In Stock |
| Part Number | Description | Stock |
|
GA20SICP12263 GENESIC SEMICONDUCTOR |
OEM/CM QUOTES ONLY | NO BROKERS |
104 |
| Part Number | Description | Stock |
|
GA20SICP12-263 GeneSic Semiconductor Inc |
RoHS: Compliant
|
0 |
| Part Number | Description | Stock |
|
GA20SICP12-263 GeneSic Semiconductor Inc |
Silicon Carbide (SiC) Junction Transistor 1200V50m? TO-263-7 RoHS: Compliant
|
0 in Stock 0 on Order |
| Part Number | Description | Stock |
|
GA20SICP12-263 D# GS0000000000038 GeneSic Semiconductor Inc |
Silicon Carbide (SiC) Junction Transistor 1200V50m? TO-263-7 |
0 |
| Part Number | Description | Stock |
|
GA20SICP12-263 D# 08X5874 GeneSic Semiconductor Inc |
SIC CO-PACK, 1.2kV, TO-263, Drain Source Voltage Vds:1.2kV, Continuous Drain Current Id:20A, Power Dissipation Pd:157W, Operating Frequency Min:-, Operating Frequency Max:-, RF Transistor Case:TO-263 (D2PAK), No. of Pins:3Pins RoHS Compliant: Yes RoHS: Compliant
Min Qty: 250
Container: Bulk
|
0 |
| Part Number | Description | Stock |
|
GA20SICP12-263 GeneSic Semiconductor Inc |
RoHS: Compliant
|
0 |
| Part Number | Description | Stock |
|
GA20SICP12263 GeneSic Semiconductor Inc |
OEM/CM ONLY |
185 |
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