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GA20SICP12-247 Datasheet

GA20SICP12-247 Cover
DatasheetGA20SICP12-247
File Size2,920.58 KB
Total Pages12
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GA20SICP12-247
Description TRANS SJT 1200V 45A TO247

GA20SICP12-247 - GeneSiC Semiconductor

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GA20SICP12-247 GA20SICP12-247 GeneSiC Semiconductor TRANS SJT 1200V 45A TO247 393

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URL Link

GA20SICP12-247

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

FET Type

-

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

50mOhm @ 20A

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

3091pF @ 800V

FET Feature

-

Power Dissipation (Max)

282W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AB

Package / Case

TO-247-3