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For Reference Only
| Part Number | IPN80R2K0P7ATMA1 |
| OEMstron Part # | IPN80R2K0P7ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CHANNEL 800V 3A SOT223 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPN80R2K0P7ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPN80R2K0P7ATMA1 Specifications
| Part Number | IPN80R2K0P7ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ P7 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 940mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 50µA | |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 500V | |
| FET Feature | - | |
| Power Dissipation (Max) | 6W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223 | |
| Package / Case | TO-261-3 |
IPN80R2K0P7ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# E02:0323_11636995 Infineon Technologies AG |
P7 Power Transistor |
Europe - 3000 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# IPN80R2K0P7ATMA1 Infineon Technologies AG |
Transistor MOSFET N-CH 800V 3A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R2K0P7ATMA1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# SP001664996 Infineon Technologies AG |
Transistor MOSFET N-CH 800V 3A 3-Pin SOT-223 T/R (Alt: SP001664996) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# IPN80R2K0P7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CHANNEL 800V 3A SOT223 |
3957 In Stock |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# 2986477RL Infineon Technologies AG |
MOSFET, N-CH, 800V, 3A, 6.4W, SOT-223 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 Infineon Technologies AG |
Single N-Channel 800 V 2 Ohm 9 nC CoolMOS™ Power Mosfet - SOT-223 RoHS: Contact Manufacturer
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
80040 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# 726-IPN80R2K0P7ATMA1 Infineon Technologies AG |
MOSFET LOW POWER_NEW RoHS: Compliant
|
1477 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# 93AC7126 Infineon Technologies AG |
MOSFET, N-CH, 800V, 3A, 6.4W, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:3A, Drain Source Voltage Vds:800V, On Resistance Rds(on):1.7ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
2910 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
69016 |
| Part Number | Description | Stock |
|
IPN80R2K0P7ATMA1 D# 2986477 Infineon Technologies AG |
MOSFET, N-CH, 800V, 3A, 6.4W, SOT-223 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
2910 |
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| In Stock | 3,872 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
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