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Part Number	Description	In Stock
PHKD13N03LT,518 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 10.4A 8SOIC Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.4A Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Power - Max: 3.57W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock364 More on Order
PHKD3NQ10T,518 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 3A 8SOIC Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock254 More on Order
PHKD6N02LT,518 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10.9A SOT96-1 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.9A Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 4.17W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock352 More on Order
PHN203,518 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.3A SOT96-1 Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock205 More on Order
PHN210,118 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8SOIC Manufacturer: NXP USA Inc. Series: TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock348 More on Order
PHN210T,118 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8SOIC Manufacturer: Nexperia USA Inc. Series: TrenchMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock229 More on Order
PHP225,118 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A 8SOIC Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock199 More on Order
PMCM650CUNEZ Nexperia	Transistors - FETs, MOSFETs - Arrays PMCM650CUNE NAX000 NONE Manufacturer: Nexperia USA Inc. FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Power - Max: 556mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.48x0.98)	In Stock323 More on Order
PMCPB5530X,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6HUSON Manufacturer: Nexperia USA Inc. FET Type: N and P-Channel Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock53,025 More on Order
PMCXB1000UEZ Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V DFN1010B-6 Manufacturer: Nexperia USA Inc. FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Power - Max: 285mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	In Stock239 More on Order
PMCXB900UELZ Nexperia	Transistors - FETs, MOSFETs - Arrays 20 V, COMPLEMENTARY N/P-CHANNEL Manufacturer: Nexperia USA Inc. FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	In Stock493 More on Order
PMCXB900UEZ Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 0.6A/0.5A 6DFN Manufacturer: Nexperia USA Inc. Series: TrenchFET® FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	In Stock91,812 More on Order
PMDPB28UN,115 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.6A HUSON6 Manufacturer: NXP USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 37mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	In Stock262 More on Order
PMDPB30XN,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4A 6HUSON Manufacturer: Nexperia USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock252 More on Order
PMDPB38UNE,115 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4A HUSON6 Manufacturer: NXP USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	In Stock357 More on Order
PMDPB42UN,115 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.9A HUSON6 Manufacturer: NXP USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 10V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	In Stock396 More on Order
PMDPB55XP,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.4A 6HUSON Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 70mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 10V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock194 More on Order
PMDPB56XN,115 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.1A HUSON6 Manufacturer: NXP USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 73mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	In Stock159 More on Order
PMDPB56XNEAX Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.1A DFN2020D-6 Manufacturer: Nexperia USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V Power - Max: 485mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020D-6	In Stock315 More on Order
PMDPB58UPE,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.6A HUSON6 Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 67mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 10V Power - Max: 515mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock11,279 More on Order
PMDPB65UP,115 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.5A SOT1118 Manufacturer: NXP USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V Power - Max: 520mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	In Stock209 More on Order
PMDPB70EN,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 6DFN Manufacturer: Nexperia USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 57mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 15V Power - Max: 510mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock428 More on Order
PMDPB70XP,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.9A 6DFN Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Power - Max: 490mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock136 More on Order
PMDPB70XPE,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3A 6HUSON Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 79mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 515mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock24,142 More on Order
PMDPB760ENX WeEn Semiconductors	Transistors - FETs, MOSFETs - Arrays MOSFET AXIAL Manufacturer: WeEn Semiconductors Series: *	In Stock394 More on Order
PMDPB80XP,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.7A HUSON6 Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 102mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 485mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock336 More on Order
PMDPB85UPE,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.9A 6HUSON Manufacturer: Nexperia USA Inc. FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 103mOhm @ 1.3A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V Power - Max: 515mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock346 More on Order
PMDPB95XNE,115 NXP	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 2.4A HUSON6 Manufacturer: NXP USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 15V Power - Max: 475mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: DFN2020-6	In Stock218 More on Order
PMDPB95XNE2X Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 2.7A 6HUSON Manufacturer: Nexperia USA Inc. FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V Power - Max: 510mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON-EP (2x2)	In Stock3,724 More on Order
PMDT290UCE,115 Nexperia	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT666 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	In Stock57,492 More on Order

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