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Part Number	Description	In Stock
IRF7757TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.8A 8TSSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	In Stock166 More on Order
IRF7901D1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A 8SOIC Manufacturer: Infineon Technologies Series: FETKY™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock456 More on Order
IRF7901D1TR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A 8SOIC Manufacturer: Infineon Technologies Series: FETKY™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock483 More on Order
IRF7901D1TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.2A 8SOIC Manufacturer: Infineon Technologies Series: FETKY™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock146 More on Order
IRF7902PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock363 More on Order
IRF7902TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A, 9.7A Rds On (Max) @ Id, Vgs: 22.6mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock240 More on Order
IRF7904PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.6A/11A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,187 More on Order
IRF7904TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.6A/11A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock395 More on Order
IRF7904TRPBF-1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.6A/11A 8-SOIC Manufacturer: Infineon Technologies Series: *	In Stock432 More on Order
IRF7905PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock363 More on Order
IRF7905TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock428 More on Order
IRF7907PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.1A/11A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock188 More on Order
IRF7907TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.1A/11A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock368 More on Order
IRF7910PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 10A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock332 More on Order
IRF7910TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 10A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 6V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock261 More on Order
IRF8313PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.7A 8-SOIC Manufacturer: Infineon Technologies FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock213 More on Order
IRF8313TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.7A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock15,574 More on Order
IRF8513PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A/11A 8-SOIC Manufacturer: Infineon Technologies FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 11A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V Power - Max: 1.5W, 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock348 More on Order
IRF8513TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A/11A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 11A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V Power - Max: 1.5W, 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock318 More on Order
IRF8852TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 7.8A 8TSSOP Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A Rds On (Max) @ Id, Vgs: 11.3mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1151pF @ 20V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	In Stock481 More on Order
IRF8910GPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock388 More on Order
IRF8910GTRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock430 More on Order
IRF8910PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock199 More on Order
IRF8910TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock415 More on Order
IRF8915 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 8.9A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock105 More on Order
IRF8915TR Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 8.9A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock438 More on Order
IRF8915TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 8.9A 8-SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.9A Rds On (Max) @ Id, Vgs: 18.3mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,637 More on Order
IRF9358PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 9.2A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock208 More on Order
IRF9358TRPBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 9.2A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.2A Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock38,233 More on Order
IRF9362PBF Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8A 8SOIC Manufacturer: Infineon Technologies Series: HEXFET® FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock209 More on Order

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