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Part Number	Description	In Stock
HS8K11TB Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7A/11A HSML Manufacturer: Rohm Semiconductor FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 11A Rds On (Max) @ Id, Vgs: 17.9mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10	In Stock191 More on Order
HS8K1TB Rohm Semiconductor	Transistors - FETs, MOSFETs - Arrays 30V NCH+NCH POWER MOSFET Manufacturer: Rohm Semiconductor FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 11A (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC, 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 348pF, 429pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: HSML3030L10	In Stock4,622 More on Order
HTMN5130SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 2.6A 8SOIC Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 218.7pF @ 25V Power - Max: 1.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock311 More on Order
HUF76407DK8T ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V SOP-8 Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock174 More on Order
HUFA76404DK8T ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 62V 3.6A 8-SOIC Manufacturer: ON Semiconductor FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 110mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock240 More on Order
HUFA76407DK8T ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 8-SOIC Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock239 More on Order
HUFA76407DK8T-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 8-SOIC Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, UltraFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock286 More on Order
HUFA76413DK8T ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 5.1A 8-SO Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock101 More on Order
HUFA76413DK8T-F085 ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 5.1A 8-SO Manufacturer: ON Semiconductor Series: Automotive, AEC-Q101, UltraFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 49mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock3,108 More on Order
HUFA76504DK8T ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 8-SOIC Manufacturer: ON Semiconductor Series: UltraFET™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Rds On (Max) @ Id, Vgs: 200mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	In Stock455 More on Order
IPG15N06S3L-45 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 15A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 45mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V Power - Max: 21W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock389 More on Order
IPG16N10S461AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock420 More on Order
IPG16N10S461ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock396 More on Order
IPG16N10S4L61AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.1V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V Power - Max: 29W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock155 More on Order
IPG20N04S408AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock277 More on Order
IPG20N04S408ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 20A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock292 More on Order
IPG20N04S412AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock164 More on Order
IPG20N04S412ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock361 More on Order
IPG20N04S4L07AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock214 More on Order
IPG20N04S4L07ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock449 More on Order
IPG20N04S4L08AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock307 More on Order
IPG20N04S4L08ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 25V Power - Max: 54W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock30,381 More on Order
IPG20N04S4L11AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock456 More on Order
IPG20N04S4L11ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Power - Max: 41W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock20,014 More on Order
IPG20N06S2L35AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock12,927 More on Order
IPG20N06S2L35ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 20A TDSON-8-4 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock6,216 More on Order
IPG20N06S2L50AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 51W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock229 More on Order
IPG20N06S2L50ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 20A TDSON-8-4 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power - Max: 51W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock205 More on Order
IPG20N06S2L65AATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Power - Max: 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	In Stock6,266 More on Order
IPG20N06S3L-23 Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 20A TDSON-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 23mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Power - Max: 45W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	In Stock369 More on Order

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