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Transistors

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Part Number
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DMN601DWKQ-7
DMN601DWKQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N-CHAN 41V 60V SOT363

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock7,261

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DMN601VK-7
DMN601VK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.305A SOT-563

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock3,980

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DMN601VKQ-7
DMN601VKQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.305A SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock281

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DMN6022SSD-13
DMN6022SSD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 41V 60V SO-8

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V
  • Power - Max: 1.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock263

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DMN6022SSS-13
DMN6022SSS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 41V-60V SO-8

  • Manufacturer: Diodes Incorporated
  • Series: *
In Stock170

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DMN6040SSD-13
DMN6040SSD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 5A 8SO

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock123,865

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DMN6040SSDQ-13
DMN6040SSDQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N-CH 60V 5.0A SO-8

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock3,872

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DMN6066SSD-13
DMN6066SSD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 3.3A 8SO

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
  • Power - Max: 1.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock33,434

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DMN6070SSD-13
DMN6070SSD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 3.3A 8-SO

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock20,156

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DMN61D8LVT-13
DMN61D8LVT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.63A TSOT26

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock225

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DMN61D8LVT-7
DMN61D8LVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.63A TSOT26

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock9,295

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DMN61D8LVTQ-13
DMN61D8LVTQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.63A TSOT26

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock191

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DMN61D8LVTQ-7
DMN61D8LVTQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.63A TSOT26

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 630mA
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
  • Power - Max: 820mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock399

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DMN61D9UDW-13
DMN61D9UDW-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.35A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock311

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DMN61D9UDW-7
DMN61D9UDW-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.35A

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock136,184

More on Order

DMN62D0UDW-13
DMN62D0UDW-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.35A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock237

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DMN62D0UDW-7
DMN62D0UDW-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.35A

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
  • Power - Max: 320mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock25,083

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DMN62D0UT-13
DMN62D0UT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.35A SOT523

  • Manufacturer: Diodes Incorporated
  • Series: *
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock234

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DMN62D0UT-7
DMN62D0UT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.35A SOT523

  • Manufacturer: Diodes Incorporated
  • Series: *
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock274

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DMN63D0LT-7
DMN63D0LT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET N-CH 100V SOT523

  • Manufacturer: Diodes Incorporated
In Stock4,259

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DMN63D1LDW-13
DMN63D1LDW-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.25A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock387

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DMN63D1LDW-7
DMN63D1LDW-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.25A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock111

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DMN63D1LV-13
DMN63D1LV-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 60V 550MA SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 940mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock351

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DMN63D1LV-7
DMN63D1LV-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 60V 550MA SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 940mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock420

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DMN63D8LDW-13
DMN63D8LDW-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.22A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock155

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DMN63D8LDW-7
DMN63D8LDW-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.22A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock446,819

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DMN63D8LDWQ-7
DMN63D8LDWQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.22A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 220mA
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock4,686

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DMN63D8LV-7
DMN63D8LV-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 0.26A SOT563

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 260mA
  • Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 450mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock97,081

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DMN65D8LDW-7
DMN65D8LDW-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 0.18A SOT363

  • Manufacturer: Diodes Incorporated
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 180mA
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock269,052

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DMN65D8LDWQ-13
DMN65D8LDWQ-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 60V 180MA SOT363

  • Manufacturer: Diodes Incorporated
  • Series: *
In Stock397

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