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Records 64,903

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Part Number	Description	In Stock
DMN1250UFEL-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V U-QFN1515-1 Manufacturer: Diodes Incorporated FET Type: 8 N-Channel, Common Gate, Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Power - Max: 660mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-UFQFN Exposed Pad Supplier Device Package: U-QFN1515-12	In Stock329 More on Order
DMN13M9UCA6-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL X3-DSN3518-6 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Power - Max: 2.67W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN3518-6	In Stock376 More on Order
DMN16M0UCA6-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V X4-DSN2112- Manufacturer: Diodes Incorporated Series: *	In Stock428 More on Order
DMN16M9UCA6-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CHANNEL X3-DSN2718-6 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	In Stock122 More on Order
DMN2004DMK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.54A SOT-26 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 225mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock112,027 More on Order
DMN2004DWK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.54A SOT-363 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock90,847 More on Order
DMN2004DWKQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2NCH 20V 540MA SOT363 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock153 More on Order
DMN2004VK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.54A SOT-563 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock44,202 More on Order
DMN2005DLP4K-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.3A 6-DFN Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 900mV @ 100µA Power - Max: 400mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: X2-DFN1310-6 (Type B)	In Stock49,677 More on Order
DMN2008LFU-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2NCH 20V 14.5A UDFN2030 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	In Stock323 More on Order
DMN2008LFU-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CHA 20V 14.5A DFN2030 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	In Stock256 More on Order
DMN2010UDZ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 11A U-DFN2535-6 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 7mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2535-6	In Stock366 More on Order
DMN2011UFX-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 12.2A DFN2050-4 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Supplier Device Package: V-DFN2050-4	In Stock11,511 More on Order
DMN2013UFX-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 6-DFN Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V Power - Max: 2.14W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: W-DFN5020-6	In Stock151 More on Order
DMN2014LHAB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 9A 6-UDFN Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	In Stock4,712 More on Order
DMN2016LFG-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.2A 8UDFN Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V Power - Max: 770mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	In Stock29,056 More on Order
DMN2016LHAB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7.5A 6UDFN Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2030-6	In Stock456 More on Order
DMN2016UFX-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V V-DFN2050-4 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Power - Max: 1.07W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Supplier Device Package: V-DFN2050-4	In Stock452 More on Order
DMN2016UTS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 8.58A 8-TSSOP Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.58A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V Power - Max: 880mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	In Stock46,807 More on Order
DMN2019UTS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.4A TSSOP-8 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 780mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	In Stock3,115 More on Order
DMN2022UNS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 8V 24V POWERDI3333-8 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	In Stock303 More on Order
DMN2022UNS-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 20V POWERDI3333-8 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8	In Stock440 More on Order
DMN2023UCB4-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH X1-WLB1818-4 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLBGA Supplier Device Package: X1-WLB1818-4	In Stock221 More on Order
DMN2024UDH-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-DFN3030-8 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 950mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8	In Stock339 More on Order
DMN2024UTS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSSOP-8 T&R Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 890mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	In Stock481 More on Order
DMN2024UVT-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 Manufacturer: Diodes Incorporated Series: *	In Stock212 More on Order
DMN2024UVT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 Manufacturer: Diodes Incorporated Series: *	In Stock328 More on Order
DMN2025UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-DFN2020-6 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock319 More on Order
DMN2025UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-DFN2020-6 Manufacturer: Diodes Incorporated FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock320 More on Order
DMN2028UFDH-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 6.8A POWERDI Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3030-8	In Stock213 More on Order

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