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Transistors

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Part Number
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APTM120A80FT1G
APTM120A80FT1G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 14A SP1

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 14A
  • Rds On (Max) @ Id, Vgs: 960mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
In Stock161

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APTM120DDA57T3G
APTM120DDA57T3G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 17A SP3

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
In Stock260

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APTM120DSK57T3G
APTM120DSK57T3G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 17A SP3

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
In Stock217

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APTM120DU15G
APTM120DU15G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 60A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 60A
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 748nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock388

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APTM120DU29TG
APTM120DU29TG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 34A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock224

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APTM120H140FT1G
APTM120H140FT1G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 1200V 8A SP1

  • Manufacturer: Microsemi Corporation
  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
In Stock219

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APTM120H29FG
APTM120H29FG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 1200V 34A SP6

  • Manufacturer: Microsemi Corporation
  • Series: POWER MOS 7®
  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock167

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APTM120H57FT3G
APTM120H57FT3G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 1200V 17A SP3

  • Manufacturer: Microsemi Corporation
  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
In Stock487

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APTM120H57FTG
APTM120H57FTG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 1200V 17A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock451

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APTM120TA57FPG
APTM120TA57FPG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 1200V 17A SP6-P

  • Manufacturer: Microsemi Corporation
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
In Stock180

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APTM120TDU57PG
APTM120TDU57PG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 6N-CH 1200V 17A SP6-P

  • Manufacturer: Microsemi Corporation
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
In Stock118

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APTM120VDA57T3G
APTM120VDA57T3G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 1200V 17A SP3

  • Manufacturer: Microsemi Corporation
  • Series: POWER MOS 7®
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
In Stock130

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APTM20AM04FG
APTM20AM04FG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 372A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 372A
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock387

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APTM20AM05FG
APTM20AM05FG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 317A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Power - Max: 1136W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock266

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APTM20AM05FTG
APTM20AM05FTG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 333A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 333A
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock125

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APTM20AM06SG
APTM20AM06SG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 300A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 300A
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock395

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APTM20AM08FTG
APTM20AM08FTG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 208A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock470

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APTM20AM10FTG
APTM20AM10FTG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 175A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock168

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APTM20AM10STG
APTM20AM10STG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 175A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock171

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APTM20DHM08G
APTM20DHM08G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 208A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock296

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APTM20DHM10G
APTM20DHM10G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 175A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock433

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APTM20DHM16T3G
APTM20DHM16T3G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 104A SP3

  • Manufacturer: Microsemi Corporation
  • Series: POWER MOS 7®
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
In Stock373

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APTM20DHM16TG
APTM20DHM16TG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 104A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock157

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APTM20DHM20TG
APTM20DHM20TG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 89A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 89A
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock270

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APTM20DUM04G
APTM20DUM04G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 372A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 372A
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 186A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock116

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APTM20DUM05G
APTM20DUM05G

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 317A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Power - Max: 1136W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock137

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APTM20DUM05TG
APTM20DUM05TG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 333A SP8

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 333A
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 166.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock341

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APTM20DUM08TG
APTM20DUM08TG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 208A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock316

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APTM20DUM10TG
APTM20DUM10TG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 200V 175A SP4

  • Manufacturer: Microsemi Corporation
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
In Stock273

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APTM20HM08FG
APTM20HM08FG

Microsemi

Transistors - FETs, MOSFETs - Arrays

MOSFET 4N-CH 200V 208A SP6

  • Manufacturer: Microsemi Corporation
  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
In Stock441

More on Order