Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 704/2164

Part Number	Description	In Stock
RN2317(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock144 More on Order
RN2318(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	In Stock286 More on Order
RN2401,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock455 More on Order
RN2402,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock393 More on Order
RN2402S,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock127 More on Order
RN2402S,LF(D Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock209 More on Order
RN2403,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock315 More on Order
RN2404,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V TO236-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock3,779 More on Order
RN2404TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock475 More on Order
RN2405,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased X34 PB-F S-MINI PLN (LF) TRANSIS Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock256 More on Order
RN2406,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR4.7KOHM Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock422 More on Order
RN2409,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V 0.2W SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock116 More on Order
RN2411,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR10KOHM Q1BERINFINIT Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock402 More on Order
RN2412TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock113 More on Order
RN2413TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock490 More on Order
RN2416,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR4.7KOHM Q1BER10KOHM Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock327 More on Order
RN2418,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR47KOHM Q1BER10KOHM Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock296 More on Order
RN2421(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 50V TO236-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock310 More on Order
RN2422TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock482 More on Order
RN2425(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR0.47KOHM Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock456 More on Order
RN2426(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR1KOHM Q1 Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock467 More on Order
RN2427TE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock491 More on Order
SDTA114YET1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SC75-3 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	In Stock4,595 More on Order
SDTC114EET1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W SC75-3 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	In Stock3,657 More on Order
SDTC114YET1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W SC75-3 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	In Stock14,205 More on Order
SDTC124EET1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W SC75 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	In Stock132 More on Order
SDTC144EET1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.2W SC75 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	In Stock413 More on Order
SMMUN2111LT1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT23 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	In Stock42,682 More on Order
SMMUN2111LT3G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT-23 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	In Stock439 More on Order
SMMUN2113LT1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT23 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	In Stock13,099 More on Order

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