Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
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Page 689/2164

Part Number	Description	In Stock
PDTB123EK,115 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 Manufacturer: NXP USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	In Stock409 More on Order
PDTB123EQAZ Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 325mW Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	In Stock147 More on Order
PDTB123ES,126 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer: NXP USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock387 More on Order
PDTB123ET,215 Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock347 More on Order
PDTB123EUF Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock388 More on Order
PDTB123EUX Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock134 More on Order
PDTB123TK,115 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 Manufacturer: NXP USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	In Stock239 More on Order
PDTB123TS,126 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer: NXP USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock416 More on Order
PDTB123TT,215 Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock288 More on Order
PDTB123YK,115 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 Manufacturer: NXP USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	In Stock394 More on Order
PDTB123YQAZ Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 325mW Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	In Stock481 More on Order
PDTB123YS,126 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer: NXP USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock128 More on Order
PDTB123YT,215 Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TO236AB Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock24,698 More on Order
PDTB123YUF Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock440 More on Order
PDTB123YUX Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock333 More on Order
PDTB143EQAZ Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 325mW Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	In Stock210 More on Order
PDTB143ETR Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 320mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock156 More on Order
PDTB143ETVL Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 320mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock401 More on Order
PDTB143EUF Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock275 More on Order
PDTB143EUX Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock287 More on Order
PDTB143XQAZ Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 3DFN Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 325mW Mounting Type: Surface Mount Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3	In Stock280 More on Order
PDTB143XTR Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 320mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock4,842 More on Order
PDTB143XTVL Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.46W Manufacturer: Nexperia USA Inc. Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 320mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	In Stock350 More on Order
PDTB143XUF Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock320 More on Order
PDTB143XUX Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.425W Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	In Stock334 More on Order
PDTC114EE,115 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SC75 Manufacturer: NXP USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75	In Stock247 More on Order
PDTC114EK,115 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 Manufacturer: NXP USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	In Stock413 More on Order
PDTC114EK,135 NXP	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 Manufacturer: NXP USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3; MPAK	In Stock262 More on Order
PDTC114EM,315 Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SOT883 Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: DFN1006-3	In Stock436 More on Order
PDTC114EMB,315 Nexperia	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW 3DFN Manufacturer: Nexperia USA Inc. Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: DFN1006B-3	In Stock454 More on Order

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