Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Bipolar (BJT) - Single (13,715)
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FETs, MOSFETs - Arrays (3,829)
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FETs, MOSFETs - Single (29,970)
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Special Purpose (162)

Records 64,903

Page 679/2164

Part Number	Description	In Stock
MUN5241T1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS BRT NPN 50V 100MA SC70-3 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 202mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	In Stock280 More on Order
NSB9435T1G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.72W SOT223 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 30V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Frequency - Transition: 110MHz Power - Max: 720mW Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	In Stock252 More on Order
NSBA113EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL PNP Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock396 More on Order
NSBA114EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock416 More on Order
NSBA114TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock184 More on Order
NSBA114YF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock420 More on Order
NSBA115TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock381 More on Order
NSBA123EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL PNP Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock284 More on Order
NSBA123JF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock218 More on Order
NSBA123TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock226 More on Order
NSBA124EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock325 More on Order
NSBA124XF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL PNP Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock204 More on Order
NSBA143EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock174 More on Order
NSBA143TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL PNP Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock421 More on Order
NSBA143ZF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock175 More on Order
NSBA144EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock433 More on Order
NSBA144TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock233 More on Order
NSBA144WF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock160 More on Order
NSBC113EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL NPN Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock213 More on Order
NSBC114EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock172 More on Order
NSBC114TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock187 More on Order
NSBC114YF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock474 More on Order
NSBC115TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock243 More on Order
NSBC123EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL NPN Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock157 More on Order
NSBC123JF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock223 More on Order
NSBC123TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock219 More on Order
NSBC124EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock408 More on Order
NSBC124XF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL NPN Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock495 More on Order
NSBC143EF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 254MW SOT1123 Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock485 More on Order
NSBC143TF3T5G ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS DUAL NPN Manufacturer: ON Semiconductor Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	In Stock363 More on Order

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