Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
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Part Number	Description	In Stock
BCR185WE6327BTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock127 More on Order
BCR185WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.25W SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock268 More on Order
BCR 189F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock153 More on Order
BCR 189L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock203 More on Order
BCR 189T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock282 More on Order
BCR191E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock425 More on Order
BCR 191F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock193 More on Order
BCR 191L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock299 More on Order
BCR 191T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock201 More on Order
BCR191WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock286 More on Order
BCR191WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock138 More on Order
BCR 192 B6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock287 More on Order
BCR192E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock149 More on Order
BCR192E6785HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock470 More on Order
BCR 192F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock344 More on Order
BCR 192L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock342 More on Order
BCR 192T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock250 More on Order
BCR192WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock274 More on Order
BCR192WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock274 More on Order
BCR196E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock227 More on Order
BCR 196F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock280 More on Order
BCR 196L3 E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSLP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4	In Stock129 More on Order
BCR 196T E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SC75 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75	In Stock460 More on Order
BCR196WE6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock162 More on Order
BCR196WH6327XTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SOT323-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	In Stock211 More on Order
BCR198B6327HTLA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock299 More on Order
BCR198E6327HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock25,842 More on Order
BCR198E6393HTSA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP SOT23 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock385 More on Order
BCR198E6433HTMA1 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	In Stock136 More on Order
BCR 198F E6327 Infineon Technologies	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW TSFP-3 Manufacturer: Infineon Technologies Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	In Stock206 More on Order

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