Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 589/2164

Part Number	Description	In Stock
TSC966CW RPG Taiwan Semiconductor Corporation	Transistors - Bipolar (BJT) - Single TRANSISTOR, NPN, 400V, 0.3A, 100 Manufacturer: Taiwan Semiconductor Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	In Stock42,731 More on Order
TTA0002(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 18A TO-3PL Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 18A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 180W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	In Stock440 More on Order
TTA003,L1NQ(O Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 3A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	In Stock260 More on Order
TTA004B,Q Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 160V 1.5A TO126N Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	In Stock2,789 More on Order
TTA1713-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-45V IC-0.5A Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock228 More on Order
TTA1713-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR VCEO-45V IC-0.5A Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock402 More on Order
TTA1943(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 230V 15A TO-3PL Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	In Stock370 More on Order
TTC0002(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 18A TO-3PL Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 18A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 180W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	In Stock422 More on Order
TTC004B,Q Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 160V 1.5A TO126N Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	In Stock11,031 More on Order
TTC008(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 285V 1.5A PW MOLD2 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 285V Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 1.1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PW-MOLD2	In Stock498 More on Order
TTC009,F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 80V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock148 More on Order
TTC009,F(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 3A 80V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock411 More on Order
TTC012(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 375V 2A PW MOLD2 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 375V Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 300mA, 5V Power - Max: 1.1W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: PW-MOLD2	In Stock110 More on Order
TTC1949-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.5A HF Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock128 More on Order
TTC1949-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.5A HF Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock482 More on Order
TTC4116FU,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR VCEO50V IC0.15A H Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock122 More on Order
TTC5200(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 230V 15A TO-3PL Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(L)	In Stock613 More on Order
UML1NTR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 0.15A SOT353 Manufacturer: Rohm Semiconductor Transistor Type: PNP + Diode (Isolated) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	In Stock139 More on Order
UML2NTR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.15A SOT353 Manufacturer: Rohm Semiconductor Transistor Type: NPN + Diode (Isolated) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Power - Max: 150mW Frequency - Transition: 180MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	In Stock3,605 More on Order
UML4NTR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 12V 0.5A SOT353 Manufacturer: Rohm Semiconductor Transistor Type: PNP + Diode (Isolated) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 120mW Frequency - Transition: 260MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	In Stock172 More on Order
UML6NTR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 12V 0.5A UMT6 Manufacturer: Rohm Semiconductor Transistor Type: NPN + Diode (Isolated) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Power - Max: 120mW Frequency - Transition: 320MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	In Stock186 More on Order
UMT2222AT106 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.6A SOT-323 Manufacturer: Rohm Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock249 More on Order
UMT2907AT106 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A SOT-323 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock242 More on Order
UMT3904T106 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.2A SOT-323 Manufacturer: Rohm Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock9,664 More on Order
UMT3906T106 Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.2A SOT-323 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	In Stock23,213 More on Order
US6T4TR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 12V 3A TUMT6 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	In Stock457 More on Order
US6T5TR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 2A TUMT6 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 370mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 400mW Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	In Stock231 More on Order
US6T6TR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 2A TUMT6 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Power - Max: 1W Frequency - Transition: 360MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	In Stock221 More on Order
US6T7TR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 30V 1.5A TUMT6 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 370mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 280MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	In Stock237 More on Order
US6X3TR Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 12V 3A TUMT6 Manufacturer: Rohm Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 250mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V Power - Max: 400mW Frequency - Transition: 360MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	In Stock137 More on Order

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